onsemi NVD5C464N Type N-Channel MOSFET, 59 A, 40 V Enhancement, 4-Pin TO-252

RS Stock No.:: 172-3318
Mfr. Part No.:: NVD5C464NT4G
Manufacturer:: onsemi

onsemi NVD5C464N Type N-Channel MOSFET, 59 A, 40 V Enhancement, 4-Pin TO-252

Subtotal (1 reel of 2500 units)*

€1,955.00

(exc. VAT)

€2,405.00

(inc. VAT)

Temporarily out of stock

Shipping from 01 June 2026

Need more? Click ‘Check delivery dates’ to find extra stock and lead times.

Units	Per unit	Per Reel*
2500 +	€0.782	€1,955.00

*price indicative

RS Stock No.:: 172-3318
Mfr. Part No.:: NVD5C464NT4G
Manufacturer:: onsemi

Specifications

Technical data sheets

Legislation and Compliance

Product Details

Find similar products by selecting one or more attributes.

Select all	Attribute	Value
	Brand	onsemi
	Channel Type	Type N
	Product Type	MOSFET
	Maximum Continuous Drain Current Id	59A
	Maximum Drain Source Voltage Vds	40V
	Series	NVD5C464N
	Package Type	TO-252
	Mount Type	Surface
	Pin Count	4
	Maximum Drain Source Resistance Rds	5.8mΩ
	Channel Mode	Enhancement
	Typical Gate Charge Qg @ Vgs	20nC
	Minimum Operating Temperature	-55°C
	Maximum Gate Source Voltage Vgs	20 V
	Forward Voltage Vf	0.9V
	Maximum Power Dissipation Pd	40W
	Maximum Operating Temperature	175°C
	Height	2.25mm
	Standards/Approvals	No
	Length	6.73mm
	Width	6.22 mm
	Automotive Standard	AEC-Q101

	Select all
	Brand onsemi
	Channel Type Type N
	Product Type MOSFET
	Maximum Continuous Drain Current Id 59A
	Maximum Drain Source Voltage Vds 40V
	Series NVD5C464N
	Package Type TO-252
	Mount Type Surface
	Pin Count 4
	Maximum Drain Source Resistance Rds 5.8mΩ
	Channel Mode Enhancement
	Typical Gate Charge Qg @ Vgs 20nC
	Minimum Operating Temperature -55°C
	Maximum Gate Source Voltage Vgs 20 V
	Forward Voltage Vf 0.9V
	Maximum Power Dissipation Pd 40W
	Maximum Operating Temperature 175°C
	Height 2.25mm
	Standards/Approvals No
	Length 6.73mm
	Width 6.22 mm
	Automotive Standard AEC-Q101

SuperFET® III MOSFET is ON Semiconductor’s brand-new high voltage super-junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on-resistance and lower gate charge performance. This advanced technology is tailored to minimize conduction loss, provide superior switching performance, and withstand extreme dv/dt rate. Consequently, SuperFET III MOSFET is very suitable for the various power system for miniaturization and higher efficiency.

700 V @ TJ = 150 oC

Higher system reliability at low temperature operation

Ultra Low Gate Charge (Typ. Qg = 259 nC)

Lower switching loss

Low Effective Output Capacitance (Typ. Coss(eff.) = 1972 pF)

Lower switching loss

Excellent body diode performance (low Qrr, robust body diode)

Higher system reliability in LLC and Phase shift full bridge circuit

Optimized Capacitance

Lower peak Vds and lower Vgs oscillation

Typ. RDS(on) = 23 mΩ

onsemi NVD5C464N Type N-Channel MOSFET, 59 A, 40 V Enhancement, 4-Pin TO-252

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