N-Channel MOSFET, 60 A, 40 V, 8-Pin PowerPAK 1212-8 Vishay Siliconix SiSS12DN-T1-GE3

RS Stock No.:: 178-3701
Mfr. Part No.:: SiSS12DN-T1-GE3
Manufacturer:: Vishay Siliconix

N-Channel MOSFET, 60 A, 40 V, 8-Pin PowerPAK 1212-8 Vishay Siliconix SiSS12DN-T1-GE3

Price Each (On a Reel of 3000)**

€0.391

(exc. VAT)

€0.481

(inc. VAT)

14980 In stock for delivery within 2 working days*

* Delivery dates may change based on your chosen quantity and delivery address.

Units	Per unit	Per Reel**
3000 +	€0.391	€1,173.00

**price indicative

RS Stock No.:: 178-3701
Mfr. Part No.:: SiSS12DN-T1-GE3
Manufacturer:: Vishay Siliconix

Datasheet

Attribute	Value
Channel Type	N
Maximum Continuous Drain Current	60 A
Maximum Drain Source Voltage	40 V
Series	TrenchFET
Package Type	PowerPAK 1212-8
Mounting Type	Surface Mount
Pin Count	8
Maximum Drain Source Resistance	2 mΩ
Channel Mode	Enhancement
Maximum Gate Threshold Voltage	1.1V
Minimum Gate Threshold Voltage	2.4V
Maximum Power Dissipation	65.7 W
Transistor Configuration	Single
Maximum Gate Source Voltage	-16 V, +20 V
Maximum Operating Temperature	+150 °C
Transistor Material	Si
Width	3.15mm
Length	3.15mm
Typical Gate Charge @ Vgs	59 nC @ 10 V
Number of Elements per Chip	1
Height	1.07mm
Minimum Operating Temperature	-55 °C
Forward Diode Voltage	1.1V

N-Channel MOSFET, 60 A, 40 V, 8-Pin PowerPAK 1212-8 Vishay Siliconix SiSS12DN-T1-GE3

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