Vishay TrenchFET N-Channel MOSFET, 24.7 A, 100 V Enhancement, 8-Pin PowerPAK 1212-8 SiS890ADN-T1-GE3

Currently unavailable
We don't know if this item will be back in stock, RS intend to remove it from our range soon.
Packaging Options:
RS Stock No.:
228-2927
Mfr. Part No.:
SiS890ADN-T1-GE3
Manufacturer:
Vishay
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Brand

Vishay

Series

TrenchFET

Channel Type

N

Product Type

MOSFET

Maximum Continuous Drain Current (Id)

24.7 A

Maximum Drain Source Voltage (Vds)

100 V

Channel Mode

Enhancement

Pin Count

8

Package Type

PowerPAK 1212-8

Maximum Drain Source Resistance (Rds)

0.0255 Ω

Mount Type

Surface

The Vishay N-Channel 100-V (D-S) MOSFET.

100 % Rg and UIS tested

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