Vishay Siliconix Dual TrenchFET 2 Type N-Channel MOSFET, 6 A, 60 V Enhancement, 8-Pin PowerPAK 1212 SQS966ENW-T1_GE3

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Subtotal (1 pack of 25 units)*

€17.425

(exc. VAT)

€21.425

(inc. VAT)

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Units
Per unit
Per Pack*
25 - 75€0.697€17.43
100 - 475€0.594€14.85
500 - 975€0.523€13.08
1000 +€0.454€11.35

*price indicative

Packaging Options:
RS Stock No.:
178-3851
Mfr. Part No.:
SQS966ENW-T1_GE3
Manufacturer:
Vishay Siliconix
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Brand

Vishay Siliconix

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

6A

Maximum Drain Source Voltage Vds

60V

Series

TrenchFET

Package Type

PowerPAK 1212

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

60mΩ

Channel Mode

Enhancement

Typical Gate Charge Qg @ Vgs

12.1nC

Minimum Operating Temperature

-55°C

Maximum Power Dissipation Pd

27.8W

Maximum Gate Source Voltage Vgs

20 V

Forward Voltage Vf

0.82V

Maximum Operating Temperature

175°C

Transistor Configuration

Dual

Standards/Approvals

No

Length

3.15mm

Height

1.07mm

Width

3.15 mm

Number of Elements per Chip

2

Automotive Standard

AEC-Q101

RoHS Status: Exempt

COO (Country of Origin):
CN
TrenchFET® power MOSFET

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