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Vishay Siliconix Dual TrenchFET 2 Type N, Type P-Channel MOSFET, 30 A, 40 V Enhancement, 8-Pin SO-8 SQJ504EP-T1_GE3

RS Stock No.:: 178-3893
Mfr. Part No.:: SQJ504EP-T1_GE3
Manufacturer:: Vishay Siliconix

Vishay Siliconix Dual TrenchFET 2 Type N, Type P-Channel MOSFET, 30 A, 40 V Enhancement, 8-Pin SO-8 SQJ504EP-T1_GE3

Bulk discount available

Subtotal (1 pack of 10 units)*

€13.60

(exc. VAT)

€16.70

(inc. VAT)

In Stock

30 unit(s) ready to ship from another location
Plus 1,410 unit(s) shipping from 07 January 2026

Need more? Click ‘Check delivery dates’ to find extra stock and lead times.

Units	Per unit	Per Pack*
10 - 90	€1.36	€13.60
100 - 490	€1.318	€13.18
500 - 990	€1.284	€12.84
1000 +	€1.25	€12.50

*price indicative

RS Stock No.:: 178-3893
Mfr. Part No.:: SQJ504EP-T1_GE3
Manufacturer:: Vishay Siliconix

Specifications

Technical data sheets

Legislation and Compliance

Product Details

Find similar products by selecting one or more attributes.

Select all	Attribute	Value
	Brand	Vishay Siliconix
	Channel Type	Type N, Type P
	Product Type	MOSFET
	Maximum Continuous Drain Current Id	30A
	Maximum Drain Source Voltage Vds	40V
	Package Type	SO-8
	Series	TrenchFET
	Mount Type	Surface
	Pin Count	8
	Maximum Drain Source Resistance Rds	30mΩ
	Channel Mode	Enhancement
	Maximum Power Dissipation Pd	34W
	Typical Gate Charge Qg @ Vgs	12.1nC
	Maximum Gate Source Voltage Vgs	20 V
	Minimum Operating Temperature	-55°C
	Forward Voltage Vf	1.2V
	Transistor Configuration	Dual
	Maximum Operating Temperature	175°C
	Standards/Approvals	No
	Length	5.99mm
	Height	1.07mm
	Width	5 mm
	Number of Elements per Chip	2
	Automotive Standard	AEC-Q101

	Select all
	Brand Vishay Siliconix
	Channel Type Type N, Type P
	Product Type MOSFET
	Maximum Continuous Drain Current Id 30A
	Maximum Drain Source Voltage Vds 40V
	Package Type SO-8
	Series TrenchFET
	Mount Type Surface
	Pin Count 8
	Maximum Drain Source Resistance Rds 30mΩ
	Channel Mode Enhancement
	Maximum Power Dissipation Pd 34W
	Typical Gate Charge Qg @ Vgs 12.1nC
	Maximum Gate Source Voltage Vgs 20 V
	Minimum Operating Temperature -55°C
	Forward Voltage Vf 1.2V
	Transistor Configuration Dual
	Maximum Operating Temperature 175°C
	Standards/Approvals No
	Length 5.99mm
	Height 1.07mm
	Width 5 mm
	Number of Elements per Chip 2
	Automotive Standard AEC-Q101

Datasheet

RoHS Status: Exempt

COO (Country of Origin):: CN

Vishay MOSFET

The Vishay surface mount dual channel (both N and P-channels) MOSFET is a new age product with a drain-source voltage of 40V. It has drain-source resistance of 17mohm at a gate-source voltage of 10V. It has a maximum power dissipation of 34W and a continuous drain current of 30A. The MOSFET has been optimized, for lower switching and conduction losses. The MOSFET offers excellent efficiency along with a long and productive life without compromising performance or functionality. It is applicable in the automotive industry.

Features and Benefits

• Halogen free

• Lead (Pb) free

• Operating temperature ranges between -55°C and 175°C

• TrenchFET power MOSFET

Certifications

• AEC-Q101

• ANSI/ESD S20.20:2014

• BS EN 61340-5-1:2007

• Rg tested

• UIS tested

Vishay Siliconix Dual TrenchFET 2 Type N, Type P-Channel MOSFET, 30 A, 40 V Enhancement, 8-Pin SO-8 SQJ504EP-T1_GE3

Vishay MOSFET

Features and Benefits

Certifications

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