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    N-Channel MOSFET, 80 A, 25 V, 8-Pin 1212 Vishay Siliconix SiSS02DN-T1-GE3

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    Subtotal (1 pack of 10 units)**

    €17.85

    (exc. VAT)

    €21.96

    (inc. VAT)

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    999999 In stock for delivery within 1 working days*

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    Per Pack**
    10 +€1.785€17.85

    **price indicative

    Packaging Options:
    RS Stock No.:
    178-3899
    Mfr. Part No.:
    SiSS02DN-T1-GE3
    Manufacturer:
    Vishay Siliconix
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    Manufacturer

    Vishay Siliconix

    Channel Type

    N

    Maximum Continuous Drain Current

    80 A

    Maximum Drain Source Voltage

    25 V

    Series

    TrenchFET

    Package Type

    1212

    Mounting Type

    Surface Mount

    Pin Count

    8

    Maximum Drain Source Resistance

    1 mΩ

    Channel Mode

    Enhancement

    Maximum Gate Threshold Voltage

    1V

    Minimum Gate Threshold Voltage

    2.2V

    Maximum Power Dissipation

    65.7 W

    Transistor Configuration

    Single

    Maximum Gate Source Voltage

    -12 V, +16 V

    Number of Elements per Chip

    1

    Typical Gate Charge @ Vgs

    55 nC @ 10 V

    Length

    3.15mm

    Maximum Operating Temperature

    +150 °C

    Width

    3.15mm

    Transistor Material

    Si

    Forward Diode Voltage

    1.1V

    Minimum Operating Temperature

    -55 °C

    Height

    1.07mm

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