Vishay Siliconix TrenchFET Type N-Channel MOSFET, 14.2 A, 100 V Enhancement, 8-Pin PowerPAK 1212 SiS110DN-T1-GE3

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Subtotal (1 pack of 25 units)*

€10.70

(exc. VAT)

€13.15

(inc. VAT)

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Units
Per unit
Per Pack*
25 +€0.428€10.70

*price indicative

Packaging Options:
RS Stock No.:
178-3962
Mfr. Part No.:
SiS110DN-T1-GE3
Manufacturer:
Vishay Siliconix
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Brand

Vishay Siliconix

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

14.2A

Maximum Drain Source Voltage Vds

100V

Package Type

PowerPAK 1212

Series

TrenchFET

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

70mΩ

Channel Mode

Enhancement

Forward Voltage Vf

1.2V

Minimum Operating Temperature

-55°C

Maximum Gate Source Voltage Vgs

20 V

Maximum Power Dissipation Pd

24W

Typical Gate Charge Qg @ Vgs

8.5nC

Maximum Operating Temperature

150°C

Standards/Approvals

No

Height

1.07mm

Width

3.15 mm

Length

3.15mm

Automotive Standard

No

RoHS Status: Exempt

COO (Country of Origin):
CN
TrenchFET® Gen IV power MOSFET

Tuned for the lowest RDS - Qoss FOM

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