P-Channel MOSFET, 4 A, 12 V, 6-Pin SOT-363 Vishay SI1401EDH-T1-GE3

The Vishay surface mount P-channel MOSFET is a new age product with a drain-source voltage of 12V and a maximum gate-source voltage of 10V. It has drain-source resistance of 34mohm at a gate-source voltage of 4.5V. It has a maximum power dissipation of 2.8W and continuous drain current of 4A. The minimum and a maximum driving voltage for this transistor are 1.5V and 4.5V respectively. The MOSFET has been optimized for lower switching and conduction losses. The MOSFET offers excellent efficiency along with a long and productive life without compromising performance or functionality.

• Halogen free
• Lead (Pb) free
• Operating temperature ranges between -55°C and 150°C
• TrenchFET power MOSFET
• Typical ESD performance 1500V

• Cellular phone
• DSC
• GPS
• Load switch
• MP3
• PA switch and battery switch for portable devices
• Portable game console

• ANSI/ESD S20.20:2014
• BS EN 61340-5-1:2007
• IEC 61249-2-21
• Rg tested