MOSFET Vishay SIHG47N65E-GE3

The Vishay SIHG47N65E is a E series N-channel power MOSFET having drain to source voltage(Vds) of 650V and gate to source voltage (VGS) 30V. It is having TO-247AC package. It is offers drain to source resistance (RDS.) of 0.072ohms at 10VGS. Maximum drain current 47A.

Low figure of merit (FOM) Ron x Qg
Low input capacitance (Ciss)
Reduced switching and conduction losses