Vishay SIHP Type N-Channel MOSFET, 47 A, 650 V Enhancement, 3-Pin TO-220AB SIHP054N65E-GE3
- RS Stock No.:
- 279-9921
- Mfr. Part No.:
- SIHP054N65E-GE3
- Manufacturer:
- Vishay
Bulk discount available
View bulk pricing optionsSubtotal (1 tube of 50 units)*
€263.95
(exc. VAT)
€324.65
(inc. VAT)
In Stock
- 950 unit(s) ready to ship from another location
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Tube* |
|---|---|---|
| 50 - 50 | €5.279 | €263.95 |
| 100 + | €4.693 | €234.65 |
*price indicative
- RS Stock No.:
- 279-9921
- Mfr. Part No.:
- SIHP054N65E-GE3
- Manufacturer:
- Vishay
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Vishay | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 47A | |
| Maximum Drain Source Voltage Vds | 650V | |
| Package Type | TO-220AB | |
| Series | SIHP | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 0.058Ω | |
| Channel Mode | Enhancement | |
| Maximum Power Dissipation Pd | 312W | |
| Typical Gate Charge Qg @ Vgs | 108nC | |
| Forward Voltage Vf | 1.2V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | RoHS | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Vishay | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 47A | ||
Maximum Drain Source Voltage Vds 650V | ||
Package Type TO-220AB | ||
Series SIHP | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 0.058Ω | ||
Channel Mode Enhancement | ||
Maximum Power Dissipation Pd 312W | ||
Typical Gate Charge Qg @ Vgs 108nC | ||
Forward Voltage Vf 1.2V | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals RoHS | ||
Automotive Standard No | ||
Vishay SIHP Series MOSFET, 650V Maximum Drain Source Voltage, 47A Maximum Continuous Drain Current - SIHP054N65E-GE3
This MOSFET is a high-voltage N‑channel enhancement transistor designed for power switching in demanding electrical systems. It is supplied in a through‑hole TO‑220AB package and is intended for use where substantial drain current and elevated voltage tolerance are required. The component is RoHS‑compliant and operates across a wide ambient temperature range suitable for industrial environments.
Features and Benefits:
• 650V drain rating enables high-voltage switching applications
• 47A continuous drain current supports heavy‑load operation
• 312W power dissipation allows sustained high‑power handling
• 0.058Ω Rds(on) reduces conduction losses under load
• 108nC typical gate charge permits controlled switching dynamics
• Gate‑source withstand of 30V safeguards drive margin
• 47A continuous drain current supports heavy‑load operation
• 312W power dissipation allows sustained high‑power handling
• 0.058Ω Rds(on) reduces conduction losses under load
• 108nC typical gate charge permits controlled switching dynamics
• Gate‑source withstand of 30V safeguards drive margin
Applications
• Suitable for industrial motor drive inverter stages
• Ideal for high‑voltage power supplies and converters
• Used for renewable energy inverter switching assemblies
• Can be used for UPS and battery‑backup power electronics
• Suitable for high‑current relay replacement circuits
• Ideal for high‑voltage power supplies and converters
• Used for renewable energy inverter switching assemblies
• Can be used for UPS and battery‑backup power electronics
• Suitable for high‑current relay replacement circuits
What temperature extremes can it endure in operation?
It is specified to function from -55°C up to 150°C, allowing use in a broad range of thermal conditions.
How is the device mounted for thermal and mechanical stability?
The component is configured for through‑hole mounting in a TO‑220AB format to facilitate heatsinking and secure PCB attachment.
What is the expected switching behaviour with respect to gate drive?
With a typical gate charge of 108nC and a maximum Vgs of 30V, switching speed and required drive energy can be calculated to match driver capability.
How does on‑resistance influence efficiency in high‑current designs?
The maximum drain‑source resistance of 0.058Ω lowers I²R losses, improving efficiency when operating near the specified 47A continuous current limit.
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