Diodes Inc Dual N/P-Channel MOSFET, 4.6 A, 3.3 A, 30 V, 6-Pin TSOT-26 DMC3071LVT-7
- RS Stock No.:
- 182-7079
- Mfr. Part No.:
- DMC3071LVT-7
- Manufacturer:
- DiodesZetex
Bulk discount available
Subtotal (1 pack of 100 units)*
€14.70
(exc. VAT)
€18.10
(inc. VAT)
In Stock
- 2,300 unit(s) ready to ship from another location
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
---|---|---|
100 - 100 | €0.147 | €14.70 |
200 - 400 | €0.129 | €12.90 |
500 - 900 | €0.103 | €10.30 |
1000 - 1900 | €0.094 | €9.40 |
2000 + | €0.086 | €8.60 |
*price indicative
- RS Stock No.:
- 182-7079
- Mfr. Part No.:
- DMC3071LVT-7
- Manufacturer:
- DiodesZetex
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
---|---|---|
Brand | DiodesZetex | |
Channel Type | N, P | |
Maximum Continuous Drain Current | 4.6 A, 3.3 A | |
Maximum Drain Source Voltage | 30 V | |
Package Type | TSOT-26 | |
Mounting Type | Surface Mount | |
Pin Count | 6 | |
Maximum Drain Source Resistance | 140 (PChannel) mΩ, 90 (NChannel) mΩ | |
Channel Mode | Enhancement | |
Maximum Gate Threshold Voltage | 2.5 (NChannel) V, 2.5 (PChannel) V | |
Minimum Gate Threshold Voltage | 1 (NChannel) V, 1 (PChannel) V | |
Maximum Power Dissipation | 1.1 W | |
Maximum Gate Source Voltage | ±20 V, ±20 V | |
Width | 1.7mm | |
Number of Elements per Chip | 2 | |
Length | 3mm | |
Typical Gate Charge @ Vgs | 4.5 nC @ 10 V (NChannel), 6.5 nC @ 10 V (PChannel) | |
Maximum Operating Temperature | +150 °C | |
Height | 0.9mm | |
Minimum Operating Temperature | -55 °C | |
Select all | ||
---|---|---|
Brand DiodesZetex | ||
Channel Type N, P | ||
Maximum Continuous Drain Current 4.6 A, 3.3 A | ||
Maximum Drain Source Voltage 30 V | ||
Package Type TSOT-26 | ||
Mounting Type Surface Mount | ||
Pin Count 6 | ||
Maximum Drain Source Resistance 140 (PChannel) mΩ, 90 (NChannel) mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 2.5 (NChannel) V, 2.5 (PChannel) V | ||
Minimum Gate Threshold Voltage 1 (NChannel) V, 1 (PChannel) V | ||
Maximum Power Dissipation 1.1 W | ||
Maximum Gate Source Voltage ±20 V, ±20 V | ||
Width 1.7mm | ||
Number of Elements per Chip 2 | ||
Length 3mm | ||
Typical Gate Charge @ Vgs 4.5 nC @ 10 V (NChannel), 6.5 nC @ 10 V (PChannel) | ||
Maximum Operating Temperature +150 °C | ||
Height 0.9mm | ||
Minimum Operating Temperature -55 °C | ||
- COO (Country of Origin):
- CN
This new generation MOSFET is designed to minimize the on-state resistance (RDS(on)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications.
Low On-Resistance
Low Input Capacitance
Fast Switching Speed
Low Input/Output Leakage
Totally Lead-Free
Halogen and Antimony Free. “Green” Device
Applications
Backlighting
DC-DC Converters
Power Management Functions
Low Input Capacitance
Fast Switching Speed
Low Input/Output Leakage
Totally Lead-Free
Halogen and Antimony Free. “Green” Device
Applications
Backlighting
DC-DC Converters
Power Management Functions
Related links
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