Dual N-Channel MOSFET, 52 A, 60 V, 8-Pin PowerPAK 1212-8SCD Vishay SiSF20DN-T1-GE3

RS Stock No.:: 188-4891
Mfr. Part No.:: SiSF20DN-T1-GE3
Manufacturer:: Vishay

Dual N-Channel MOSFET, 52 A, 60 V, 8-Pin PowerPAK 1212-8SCD Vishay SiSF20DN-T1-GE3

Price Each (On a Reel of 3000)**

€0.644

(exc. VAT)

€0.792

(inc. VAT)

Stock check temporarily unavailable - call for stock availability

Units	Per unit	Per Reel**
3000 +	€0.644	€1,932.00

**price indicative

RS Stock No.:: 188-4891
Mfr. Part No.:: SiSF20DN-T1-GE3
Manufacturer:: Vishay

Datasheet SiSF20DN-T1-GE3

Attribute	Value
Channel Type	N
Maximum Continuous Drain Current	52 A
Maximum Drain Source Voltage	60 V
Package Type	PowerPAK 1212-8SCD
Mounting Type	Surface Mount
Pin Count	8
Maximum Drain Source Resistance	18 mΩ
Channel Mode	Enhancement
Maximum Gate Threshold Voltage	3V
Minimum Gate Threshold Voltage	1V
Maximum Power Dissipation	69.4 W
Transistor Configuration	Common Drain
Maximum Gate Source Voltage	±20 V
Number of Elements per Chip	2
Width	3.4mm
Maximum Operating Temperature	+150 °C
Length	3.4mm
Typical Gate Charge @ Vgs	22 nC @ 10 V
Height	0.75mm
Minimum Operating Temperature	-55 °C

Dual N-Channel MOSFET, 52 A, 60 V, 8-Pin PowerPAK 1212-8SCD Vishay SiSF20DN-T1-GE3

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