N-Channel MOSFET, 2.9 A, 800 V, 3-Pin DPAK Vishay SIHD2N80AE-GE3

RS Stock No.:: 188-4982
Mfr. Part No.:: SIHD2N80AE-GE3
Manufacturer:: Vishay

N-Channel MOSFET, 2.9 A, 800 V, 3-Pin DPAK Vishay SIHD2N80AE-GE3

Bulk discount available

Price Each (In a Pack of 10)

€0.695

(exc. VAT)

€0.855

(inc. VAT)

Temporarily out of stock - back order for despatch 18-02-2025, delivery within 2 working days*

* Delivery dates may change based on your chosen quantity and delivery address.

Units	Per unit	Per Pack**
10 - 90	€0.695	€6.95
100 - 240	€0.626	€6.26
250 - 490	€0.59	€5.90
500 - 990	€0.452	€4.52
1000 +	€0.421	€4.21

**price indicative

RS Stock No.:: 188-4982
Mfr. Part No.:: SIHD2N80AE-GE3
Manufacturer:: Vishay

Datasheet SIHD2N80AE-GE3

Attribute	Value
Channel Type	N
Maximum Continuous Drain Current	2.9 A
Maximum Drain Source Voltage	800 V
Package Type	DPAK (TO-252)
Mounting Type	Surface Mount
Pin Count	3
Maximum Drain Source Resistance	2.9 Ω
Channel Mode	Enhancement
Maximum Gate Threshold Voltage	4V
Minimum Gate Threshold Voltage	2V
Maximum Power Dissipation	62.5 W
Transistor Configuration	Single
Maximum Gate Source Voltage	±30 V
Width	6.22mm
Number of Elements per Chip	1
Maximum Operating Temperature	+150 °C
Typical Gate Charge @ Vgs	7 nC @ 10 V
Length	6.73mm
Minimum Operating Temperature	-55 °C
Height	2.25mm
Forward Diode Voltage	1.2V

N-Channel MOSFET, 2.9 A, 800 V, 3-Pin DPAK Vishay SIHD2N80AE-GE3

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