Vishay Dual N-Channel MOSFET, 197 (Channel 2) A, 76 (Channel 1) A, 30 (Channel 1) V, 30 (Channel 2) V, 8-Pin PowerPAIR

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Subtotal (1 pack of 5 units)*

€11.36

(exc. VAT)

€13.975

(inc. VAT)

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Units
Per unit
Per Pack*
5 - 20€2.272€11.36
25 - 95€1.894€9.47
100 - 495€1.466€7.33
500 - 995€1.28€6.40
1000 +€1.056€5.28

*price indicative

Packaging Options:
RS Stock No.:
188-5009
Mfr. Part No.:
SiZF920DT-T1-GE3
Manufacturer:
Vishay
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Brand

Vishay

Channel Type

N

Maximum Continuous Drain Current

197 (Channel 2) A, 76 (Channel 1) A

Maximum Drain Source Voltage

30 (Channel 1) V, 30 (Channel 2) V

Package Type

PowerPAIR 6 x 5 F

Mounting Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance

0.0014 (Channel 2) Ω, 0.005 (Channel 1) Ω

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2.2 (Channel 2) V, 2.4 (Channel 1) V

Minimum Gate Threshold Voltage

1.1 (Channel 1) V, 1.1 (Channel 2) V

Maximum Power Dissipation

28 W, 74 W

Transistor Configuration

Dual

Maximum Gate Source Voltage

+16 V, +20 V, -12 V, -16 V

Width

5.1mm

Maximum Operating Temperature

+150 °C

Length

6.1mm

Typical Gate Charge @ Vgs

19 nC @ 15 V (Channel 1), 83 nC @ 15 V (Channel 2)

Number of Elements per Chip

2

Height

0.7mm

Minimum Operating Temperature

-55 °C

Dual N-Channel 30 V (D-S) MOSFET with Schottky Diode.

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SkyFET® low-side MOSFET with integrated Schottky

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