Dual N-Channel MOSFET, 850 mA, 20 V, 6-Pin SOT-363 Vishay SQ1922AEEH-T1_GE3

RS Stock No.:: 188-5029
Mfr. Part No.:: SQ1922AEEH-T1_GE3
Manufacturer:: Vishay

Dual N-Channel MOSFET, 850 mA, 20 V, 6-Pin SOT-363 Vishay SQ1922AEEH-T1_GE3

Bulk discount available

Price Each (In a Pack of 25)

€0.343

(exc. VAT)

€0.422

(inc. VAT)

Temporarily out of stock - back order for despatch 04-03-2025, delivery within 2 working days*

* Delivery dates may change based on your chosen quantity and delivery address.

Units	Per unit	Per Pack**
25 - 225	€0.343	€8.575
250 - 600	€0.336	€8.40
625 - 1225	€0.258	€6.45
1250 - 2475	€0.202	€5.05
2500 +	€0.154	€3.85

**price indicative

RS Stock No.:: 188-5029
Mfr. Part No.:: SQ1922AEEH-T1_GE3
Manufacturer:: Vishay

Datasheet SQ1922AEEH-T1_GE3

Attribute	Value
Channel Type	N
Maximum Continuous Drain Current	850 mA
Maximum Drain Source Voltage	20 V
Package Type	SOT-363
Mounting Type	Surface Mount
Pin Count	6
Maximum Drain Source Resistance	530 mΩ
Channel Mode	Enhancement
Maximum Gate Threshold Voltage	2.5V
Minimum Gate Threshold Voltage	1.5V
Maximum Power Dissipation	1.5 W
Maximum Gate Source Voltage	±12 V
Length	2.2mm
Typical Gate Charge @ Vgs	0.9 nC @ 10 V
Width	1.35mm
Number of Elements per Chip	2
Maximum Operating Temperature	+175 °C
Height	1mm
Forward Diode Voltage	1.2V
Minimum Operating Temperature	-55 °C
Automotive Standard	AEC-Q101

Dual N-Channel MOSFET, 850 mA, 20 V, 6-Pin SOT-363 Vishay SQ1922AEEH-T1_GE3

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