onsemi Type N-Channel MOSFET, 24 A, 650 V Enhancement, 3-Pin TO-220
- RS Stock No.:
- 189-0263
- Mfr. Part No.:
- NTP150N65S3HF
- Manufacturer:
- onsemi
Subtotal (1 tube of 50 units)*
€127.95
(exc. VAT)
€157.40
(inc. VAT)
Stock information currently inaccessible - Please check back later
Units | Per unit | Per Tube* |
|---|---|---|
| 50 + | €2.559 | €127.95 |
*price indicative
- RS Stock No.:
- 189-0263
- Mfr. Part No.:
- NTP150N65S3HF
- Manufacturer:
- onsemi
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | onsemi | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 24A | |
| Maximum Drain Source Voltage Vds | 650V | |
| Package Type | TO-220 | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 150mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Source Voltage Vgs | 30 V | |
| Maximum Power Dissipation Pd | 192W | |
| Forward Voltage Vf | 1.3V | |
| Typical Gate Charge Qg @ Vgs | 43nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 150°C | |
| Width | 4.7 mm | |
| Standards/Approvals | No | |
| Height | 16.3mm | |
| Length | 10.67mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand onsemi | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 24A | ||
Maximum Drain Source Voltage Vds 650V | ||
Package Type TO-220 | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 150mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Source Voltage Vgs 30 V | ||
Maximum Power Dissipation Pd 192W | ||
Forward Voltage Vf 1.3V | ||
Typical Gate Charge Qg @ Vgs 43nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 150°C | ||
Width 4.7 mm | ||
Standards/Approvals No | ||
Height 16.3mm | ||
Length 10.67mm | ||
Automotive Standard No | ||
SUPERFET III MOSFET is ON Semiconductor’s brand-new high voltage super-junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on-resistance and lower gate charge performance. This advanced technology is tailored to minimize conduction loss, provide superior switching performance, and withstand extreme dv/dt rate. Consequently, SUPERFET III MOSFET is very suitable for the various power systems for miniaturization and higher efficiency. SUPERFET III FRFET MOSFET’s optimized reverse recovery performance of body diode can remove additional component and improve system reliability.
700 V @ TJ = 150 °C
Ultra Low Gate Charge (Typ. Qg = 43 nC)
Low Effective Output Capacitance (Typ. Coss(eff.) = 400 pF)
Higher system reliability at low temperature operation
Excellent body diode performance (low Qrr, robust body diode)
Optimized Capacitance
Typ. RDS(on) = 121 mΩ
Lower switching loss
Lower switching loss
Higher system reliability in LLC and Phase shift full bridge circuit
Lower peak Vds and lower Vgs oscillation
Applications
Telecommunication
Cloud system
Industrial
End Products
Telecom power
Server power
EV charger
Solar / UPS