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onsemi NTP125N Type N-Channel MOSFET, 24 A, 650 V Enhancement, 3-Pin TO-220 NTP125N65S3H

RS Stock No.:: 221-6746
Mfr. Part No.:: NTP125N65S3H
Manufacturer:: onsemi

onsemi NTP125N Type N-Channel MOSFET, 24 A, 650 V Enhancement, 3-Pin TO-220 NTP125N65S3H

Subtotal (1 pack of 2 units)*

€6.11

(exc. VAT)

€7.516

(inc. VAT)

Temporarily out of stock

696 unit(s) shipping from 05 January 2026

Need more? Click ‘Check delivery dates’ to find extra stock and lead times.

Units	Per unit	Per Pack*
2 +	€3.055	€6.11

*price indicative

RS Stock No.:: 221-6746
Mfr. Part No.:: NTP125N65S3H
Manufacturer:: onsemi

Specifications

Technical data sheets

Legislation and Compliance

Product Details

Find similar products by selecting one or more attributes.

Select all	Attribute	Value
	Brand	onsemi
	Product Type	MOSFET
	Channel Type	Type N
	Maximum Continuous Drain Current Id	24A
	Maximum Drain Source Voltage Vds	650V
	Package Type	TO-220
	Series	NTP125N
	Mount Type	Through Hole
	Pin Count	3
	Maximum Drain Source Resistance Rds	125mΩ
	Channel Mode	Enhancement
	Forward Voltage Vf	1.2V
	Typical Gate Charge Qg @ Vgs	44nC
	Minimum Operating Temperature	-55°C
	Maximum Gate Source Voltage Vgs	30 V
	Maximum Power Dissipation Pd	171W
	Maximum Operating Temperature	175°C
	Length	10.67mm
	Height	16.3mm
	Width	4.7 mm
	Standards/Approvals	Pb-Free and are RoHS
	Automotive Standard	No

	Select all
	Brand onsemi
	Product Type MOSFET
	Channel Type Type N
	Maximum Continuous Drain Current Id 24A
	Maximum Drain Source Voltage Vds 650V
	Package Type TO-220
	Series NTP125N
	Mount Type Through Hole
	Pin Count 3
	Maximum Drain Source Resistance Rds 125mΩ
	Channel Mode Enhancement
	Forward Voltage Vf 1.2V
	Typical Gate Charge Qg @ Vgs 44nC
	Minimum Operating Temperature -55°C
	Maximum Gate Source Voltage Vgs 30 V
	Maximum Power Dissipation Pd 171W
	Maximum Operating Temperature 175°C
	Length 10.67mm
	Height 16.3mm
	Width 4.7 mm
	Standards/Approvals Pb-Free and are RoHS
	Automotive Standard No

Datasheet - NTP125N65S3H

The ON Semiconductor SUPERFET III MOSFET has high voltage super−junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on−resistance and lower gate charge performance. This advanced technology is tailored to minimize conduction loss, provides superior switching performance, and withstand extreme dv/dt rate.

Ultra low gate charge

low effective output capacitance 379 pF

100% avalanche tested

onsemi NTP125N Type N-Channel MOSFET, 24 A, 650 V Enhancement, 3-Pin TO-220 NTP125N65S3H

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