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onsemi NVMYS5D3N04C Type N-Channel MOSFET, 71 A, 40 V Enhancement, 4-Pin LFPAK NVMYS5D3N04CTWG

RS Stock No.:: 195-2523
Mfr. Part No.:: NVMYS5D3N04CTWG
Manufacturer:: onsemi

onsemi NVMYS5D3N04C Type N-Channel MOSFET, 71 A, 40 V Enhancement, 4-Pin LFPAK NVMYS5D3N04CTWG

Subtotal (1 pack of 30 units)*

€19.11

(exc. VAT)

€23.52

(inc. VAT)

Temporarily out of stock

5,970 unit(s) shipping from 26 January 2026

Need more? Click ‘Check delivery dates’ to find extra stock and lead times.

Units	Per unit	Per Pack*
30 +	€0.637	€19.11

*price indicative

RS Stock No.:: 195-2523
Mfr. Part No.:: NVMYS5D3N04CTWG
Manufacturer:: onsemi

Specifications

Technical data sheets

Legislation and Compliance

Product Details

Find similar products by selecting one or more attributes.

Select all	Attribute	Value
	Brand	onsemi
	Channel Type	Type N
	Product Type	MOSFET
	Maximum Continuous Drain Current Id	71A
	Maximum Drain Source Voltage Vds	40V
	Series	NVMYS5D3N04C
	Package Type	LFPAK
	Mount Type	Surface
	Pin Count	4
	Maximum Drain Source Resistance Rds	5.3mΩ
	Channel Mode	Enhancement
	Maximum Power Dissipation Pd	50W
	Maximum Gate Source Voltage Vgs	20 V
	Typical Gate Charge Qg @ Vgs	16nC
	Minimum Operating Temperature	-55°C
	Forward Voltage Vf	1.2V
	Maximum Operating Temperature	175°C
	Width	4.25 mm
	Height	1.15mm
	Standards/Approvals	No
	Length	5mm
	Automotive Standard	AEC-Q101

	Select all
	Brand onsemi
	Channel Type Type N
	Product Type MOSFET
	Maximum Continuous Drain Current Id 71A
	Maximum Drain Source Voltage Vds 40V
	Series NVMYS5D3N04C
	Package Type LFPAK
	Mount Type Surface
	Pin Count 4
	Maximum Drain Source Resistance Rds 5.3mΩ
	Channel Mode Enhancement
	Maximum Power Dissipation Pd 50W
	Maximum Gate Source Voltage Vgs 20 V
	Typical Gate Charge Qg @ Vgs 16nC
	Minimum Operating Temperature -55°C
	Forward Voltage Vf 1.2V
	Maximum Operating Temperature 175°C
	Width 4.25 mm
	Height 1.15mm
	Standards/Approvals No
	Length 5mm
	Automotive Standard AEC-Q101

Datasheet NVMYS5D3N04CTWG

Automotive Power MOSFET in a 5x6mm LFPAK package designed for compact and efficient designs and including high thermal performance. MOSFET and PPAP capable suitable for automotive applications requiring enhanced board level reliability.

Small Footprint (5x6 mm) for Compact Design

Low RDS(on) to Minimize Conduction Losses

Low QG and Capacitance to Minimize Driver Losses

LFPAK4 Package, Industry Standard

PPAP Capable

These Devices are Pb−Free

onsemi NVMYS5D3N04C Type N-Channel MOSFET, 71 A, 40 V Enhancement, 4-Pin LFPAK NVMYS5D3N04CTWG

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