Vishay EF Type N-Channel Power MOSFET, 8.4 A, 600 V Enhancement, 3-Pin TO-220 SiHA186N60EF-GE3

RS Stock No.:: 210-4963
Mfr. Part No.:: SiHA186N60EF-GE3
Manufacturer:: Vishay

Vishay EF Type N-Channel Power MOSFET, 8.4 A, 600 V Enhancement, 3-Pin TO-220 SiHA186N60EF-GE3

Subtotal (1 pack of 5 units)*

€7.10

(exc. VAT)

€8.75

(inc. VAT)

In Stock

960 unit(s) ready to ship from another location

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Units	Per unit	Per Pack*
5 +	€1.42	€7.10

*price indicative

RS Stock No.:: 210-4963
Mfr. Part No.:: SiHA186N60EF-GE3
Manufacturer:: Vishay

Specifications

Technical data sheets

Legislation and Compliance

Product Details

Find similar products by selecting one or more attributes.

Select all	Attribute	Value
	Brand	Vishay
	Product Type	Power MOSFET
	Channel Type	Type N
	Maximum Continuous Drain Current Id	8.4A
	Maximum Drain Source Voltage Vds	600V
	Package Type	TO-220
	Series	EF
	Mount Type	Through Hole
	Pin Count	3
	Maximum Drain Source Resistance Rds	168mΩ
	Channel Mode	Enhancement
	Forward Voltage Vf	1.2V
	Typical Gate Charge Qg @ Vgs	21nC
	Minimum Operating Temperature	-55°C
	Maximum Gate Source Voltage Vgs	30V
	Maximum Power Dissipation Pd	33W
	Maximum Operating Temperature	150°C
	Height	4.3mm
	Length	28.1mm
	Standards/Approvals	RoHS
	Width	9.7mm
	Automotive Standard	No

	Select all
	Brand Vishay
	Product Type Power MOSFET
	Channel Type Type N
	Maximum Continuous Drain Current Id 8.4A
	Maximum Drain Source Voltage Vds 600V
	Package Type TO-220
	Series EF
	Mount Type Through Hole
	Pin Count 3
	Maximum Drain Source Resistance Rds 168mΩ
	Channel Mode Enhancement
	Forward Voltage Vf 1.2V
	Typical Gate Charge Qg @ Vgs 21nC
	Minimum Operating Temperature -55°C
	Maximum Gate Source Voltage Vgs 30V
	Maximum Power Dissipation Pd 33W
	Maximum Operating Temperature 150°C
	Height 4.3mm
	Length 28.1mm
	Standards/Approvals RoHS
	Width 9.7mm
	Automotive Standard No

Datasheet - SiHA186N60EF-GE3

Vishay Series EF Power MOSFET, 600V Drain Source Voltage, 33W Maximum Power Dissipation - SiHA186N60EF-GE3

This power MOSFET is a high-voltage N-channel transistor designed for switched power applications where robust drain-to-source performance and compact through-hole mounting are required. It operates across a wide temperature span and is suited to designs requiring a 600V blocking capability, driven from standard gate voltages and mounted on conventional heatsinking arrangements.

Features and Benefits:

• 600V rating enables high-voltage switching in power stages
• 8.4A continuous drain current supports moderate load currents
• 168 mΩ Rds(on) reduces conduction losses at operational currents
• 33W power dissipation allows sustained thermal loading with heatsink
• 21 nC typical gate charge gives predictable switching energy demand
• 30V maximum gate drive permits common gate drive voltages

Applications

• Suitable for high-voltage switch-mode power supplies
• Ideal for industrial motor drive front ends
• Used for power conversion in renewable-energy inverters
• Can be used for lighting ballast and lamp-control circuits
• Suitable for laboratory and prototyping through-hole assemblies

What gate voltage range should I design for in control circuitry?

Keep gate drive within a ±30V limit relative to source, with typical switching driven by gate voltages up to 30V to ensure safe operation.

How does thermal management affect continuous current capability?

Continuous drain current depends on thermal resistance to ambient

using a heatsink to keep junction temperature below 150 °C maintains the rated 8.4A capability.

Is this device suitable for automotive systems requiring specific approvals?

It does not carry automotive-grade approvals, so it should not be specified where automotive-certified components are mandatory.

What switching considerations arise from the gate charge value?

The 21 nC gate charge defines the required driver current and switching transition times

plan driver sizing to balance switching losses and transition speed.