Infineon OptiMOS 5 Type N-Channel MOSFET, 40 A, 80 V N, 8-Pin PQFN

Subtotal (1 reel of 5000 units)*

€2,080.00

(exc. VAT)

€2,560.00

(inc. VAT)

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5000 +€0.416€2,080.00

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RS Stock No.:
214-4344
Mfr. Part No.:
BSZ110N08NS5ATMA1
Manufacturer:
Infineon
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Brand

Infineon

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

40A

Maximum Drain Source Voltage Vds

80V

Package Type

PQFN

Series

OptiMOS 5

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

11mΩ

Channel Mode

N

Minimum Operating Temperature

-55°C

Maximum Power Dissipation Pd

50W

Typical Gate Charge Qg @ Vgs

15nC

Forward Voltage Vf

1.2V

Maximum Operating Temperature

150°C

Length

3.4mm

Standards/Approvals

No

Height

1.1mm

Automotive Standard

No

Infineon OptiMOS 5 Series MOSFET, 80V Maximum Drain Source Voltage, 40A Maximum Continuous Drain Current - BSZ110N08NS5ATMA1


This MOSFET is a high-power N-channel semiconductor device designed for surface-mounted power switching and conversion in demanding environments. It operates across a wide temperature span suited to industrial tasks and delivers robust current handling with low voltage drop to support efficient power stages and compact thermal designs.

Features and Benefits:


• 80V drain voltage enables high-voltage switching applications
• 11mΩ low Rds(on) reduces conduction losses at high currents
• 40A continuous drain current supports heavy-load operation
• 15nC typical gate charge for fast, efficient gate switching
• 50W power dissipation allows significant heat handling
• 1.2V forward voltage minimises diode conduction losses

Applications


• Suitable for synchronous buck converters in power supplies
• Ideal for high-current motor-drive stages
• Used with DC-DC conversion modules in telecoms equipment
• Can be used for battery management and charging systems
• Appropriate for high-power LED driver circuitry

What mounting format is required for board assembly?


It is supplied in a PQFN package intended for surface-mount placement requiring a flat PCB land pattern and thermal vias for heat transfer.

How does the device handle thermal extremes during operation?


It is rated to operate from -55°C up to 150°C junction temperatures, permitting use in harsh industrial temperature profiles.

What gate-drive considerations are recommended?


The maximum gate-to-source rating is 20V and the typical total gate charge is 15nC, so a drive capable of rapid charge/discharge with appropriate slew control is advised.

Which conduction characteristic affects PCB thermal design?


Its low drain-source resistance of 11mΩ dictates lower I²R losses, shifting emphasis to managing switching and package thermal dissipation pathways.

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