Infineon OptiMOS -T2 N-Channel MOSFET, 120 A, 80 V Enhancement, 3-Pin TO-263

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Subtotal (1 reel of 1000 units)*

€2,904.00

(exc. VAT)

€3,572.00

(inc. VAT)

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Units
Per unit
Per Reel*
1000 +€2.904€2,904.00

*price indicative

RS Stock No.:
214-4365
Mfr. Part No.:
IPB120N08S403ATMA1
Manufacturer:
Infineon
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Brand

Infineon

Product Type

MOSFET

Channel Type

N

Maximum Continuous Drain Current Id

120A

Maximum Drain Source Voltage Vds

80V

Package Type

TO-263

Series

OptiMOS -T2

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

2.5mΩ

Channel Mode

Enhancement

Minimum Operating Temperature

-55°C

Maximum Power Dissipation Pd

278W

Typical Gate Charge Qg @ Vgs

128nC

Forward Voltage Vf

1.3V

Maximum Gate Source Voltage Vgs

20V

Maximum Operating Temperature

175°C

Height

4.5mm

Length

10.02mm

Width

9.27mm

Standards/Approvals

No

Automotive Standard

AEC-Q101

This Infineon OptiMOS T2 MOSFET is 100% Avalanche tested and is RoHS compliant.

It is AEC Q101 qualified

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