Infineon OptiMOS Type N-Channel MOSFET, 30 A, 55 V Enhancement, 3-Pin TO-252

Subtotal (1 reel of 2500 units)*

€1,532.50

(exc. VAT)

€1,885.00

(inc. VAT)

Add to Basket
Select or type quantity
In Stock
  • Plus 7,500 unit(s) shipping from 05 January 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units
Per unit
Per Reel*
2500 +€0.613€1,532.50

*price indicative

RS Stock No.:
214-4373
Mfr. Part No.:
IPD30N06S2L13ATMA4
Manufacturer:
Infineon
Find similar products by selecting one or more attributes.
Select all

Brand

Infineon

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

30A

Maximum Drain Source Voltage Vds

55V

Series

OptiMOS

Package Type

TO-252

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

13mΩ

Channel Mode

Enhancement

Typical Gate Charge Qg @ Vgs

54nC

Minimum Operating Temperature

-55°C

Maximum Gate Source Voltage Vgs

20 V

Maximum Power Dissipation Pd

136W

Forward Voltage Vf

1.3V

Maximum Operating Temperature

175°C

Height

2.35mm

Length

6.65mm

Width

6.42 mm

Standards/Approvals

No

Automotive Standard

AEC-Q101

This Infineon OptiMOS MOSFET provides high current capability, and Lowest switching and conduction power losses for highest thermal efficiency. It is 100% Avalanche tested.

It is lead-free

Related links