Infineon 600V CoolMOS P7 Type N-Channel MOSFET, 48 A, 600 V Enhancement, 3-Pin TO-220 IPP60R060P7XKSA1
- RS Stock No.:
- 214-4414
- Mfr. Part No.:
- IPP60R060P7XKSA1
- Manufacturer:
- Infineon
Bulk discount available
Subtotal (1 pack of 5 units)*
€24.47
(exc. VAT)
€30.10
(inc. VAT)
Temporarily out of stock
- Shipping from 12 October 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 5 - 5 | €4.894 | €24.47 |
| 10 - 20 | €4.454 | €22.27 |
| 25 - 45 | €4.16 | €20.80 |
| 50 - 120 | €3.866 | €19.33 |
| 125 + | €3.574 | €17.87 |
*price indicative
- RS Stock No.:
- 214-4414
- Mfr. Part No.:
- IPP60R060P7XKSA1
- Manufacturer:
- Infineon
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 48A | |
| Maximum Drain Source Voltage Vds | 600V | |
| Series | 600V CoolMOS P7 | |
| Package Type | TO-220 | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 60mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Power Dissipation Pd | 164W | |
| Minimum Operating Temperature | -55°C | |
| Forward Voltage Vf | 0.9V | |
| Typical Gate Charge Qg @ Vgs | 67nC | |
| Maximum Operating Temperature | 150°C | |
| Height | 4.4mm | |
| Length | 10.2mm | |
| Width | 15.93 mm | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 48A | ||
Maximum Drain Source Voltage Vds 600V | ||
Series 600V CoolMOS P7 | ||
Package Type TO-220 | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 60mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Power Dissipation Pd 164W | ||
Minimum Operating Temperature -55°C | ||
Forward Voltage Vf 0.9V | ||
Typical Gate Charge Qg @ Vgs 67nC | ||
Maximum Operating Temperature 150°C | ||
Height 4.4mm | ||
Length 10.2mm | ||
Width 15.93 mm | ||
Standards/Approvals No | ||
Automotive Standard No | ||
This Infineon 600V Cool MOS P7 super junction MOSFET continues to balance the need for high efficiency against the ease-of-use in the design process. The best-in-class RonxA and the inherently low gate charge (QG) of the Cool MOS™ 7th generation platform ensure its high efficiency.
It has rugged body diode
Integrated RG reduces MOSFET oscillation sensitivity
Related links
- Infineon 600V CoolMOS P7 Type N-Channel MOSFET 600 V Enhancement, 3-Pin TO-220
- Infineon 600V CoolMOS P7 Type N-Channel MOSFET 600 V, 3-Pin TO-247
- Infineon 600V CoolMOS P7 Type N-Channel MOSFET 600 V, 3-Pin TO-247 IPW60R060P7XKSA1
- Infineon 600V CoolMOS P7 Type N-Channel MOSFET 600 V Enhancement, 3-Pin TO-263
- Infineon 600V CoolMOS P7 Type N-Channel MOSFET 600 V Enhancement, 3-Pin TO-252
- Infineon 600V CoolMOS P7 Type N-Channel MOSFET 600 V Enhancement, 3-Pin TO-263 IPB60R360P7ATMA1
- Infineon 600V CoolMOS P7 Type N-Channel MOSFET 600 V Enhancement, 3-Pin TO-252 IPD60R180P7ATMA1
- Infineon 600V CoolMOS P7 Type N-Channel MOSFET 600 V Enhancement, 5-Pin ThinPAK IPL60R365P7AUMA1