Infineon 600V CoolMOS P7 Type N-Channel MOSFET, 18 A, 600 V Enhancement, 3-Pin TO-220 IPP60R180P7XKSA1

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Subtotal (1 pack of 10 units)*

€12.85

(exc. VAT)

€15.81

(inc. VAT)

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Per Pack*
10 - 10€1.285€12.85
20 - 40€1.222€12.22
50 - 90€1.17€11.70
100 - 240€1.118€11.18
250 +€1.042€10.42

*price indicative

Packaging Options:
RS Stock No.:
214-4416
Mfr. Part No.:
IPP60R180P7XKSA1
Manufacturer:
Infineon
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Brand

Infineon

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

18A

Maximum Drain Source Voltage Vds

600V

Series

600V CoolMOS P7

Package Type

TO-220

Mount Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance Rds

180mΩ

Channel Mode

Enhancement

Minimum Operating Temperature

-55°C

Typical Gate Charge Qg @ Vgs

25nC

Maximum Gate Source Voltage Vgs

20 V

Forward Voltage Vf

0.9V

Maximum Power Dissipation Pd

72W

Maximum Operating Temperature

150°C

Height

4.4mm

Width

15.93 mm

Length

10.2mm

Standards/Approvals

No

Automotive Standard

No

The 600V Cool MOS P7 super junction MOSFET continues to balance the need for high efficiency against the ease-of-use in the design process. The best-in-class RonxA and the inherently low gate charge (QG) of the Cool MOS™ 7th generation platform ensure its high efficiency.

It has rugged body diode

Integrated RG reduces MOSFET oscillation sensitivity

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