Infineon HEXFET Type P-Channel MOSFET, 38 A, 100 V Enhancement, 3-Pin TO-263 AUIRF5210STRL

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Subtotal (1 pack of 5 units)*

€30.22

(exc. VAT)

€37.17

(inc. VAT)

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Last RS stock
  • Final 100 unit(s), ready to ship from another location
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Per unit
Per Pack*
5 - 5€6.044€30.22
10 - 20€5.198€25.99
25 - 45€4.836€24.18
50 - 120€4.534€22.67
125 +€4.172€20.86

*price indicative

Packaging Options:
RS Stock No.:
218-2972
Mfr. Part No.:
AUIRF5210STRL
Manufacturer:
Infineon
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Brand

Infineon

Channel Type

Type P

Product Type

MOSFET

Maximum Continuous Drain Current Id

38A

Maximum Drain Source Voltage Vds

100V

Series

HEXFET

Package Type

TO-263

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

60mΩ

Channel Mode

Enhancement

Minimum Operating Temperature

-55°C

Maximum Power Dissipation Pd

3.1W

Typical Gate Charge Qg @ Vgs

150nC

Forward Voltage Vf

-1.6V

Maximum Gate Source Voltage Vgs

20 V

Maximum Operating Temperature

150°C

Width

9.65 mm

Height

4.83mm

Length

10.67mm

Standards/Approvals

No

Automotive Standard

AEC-Q101

The Infineon P-channel automotive MOSFET. It is specifically designed for automotive applications. This cellular design of HEXFET® Power MOSFETs utilizes the latest processing techniques to achieve low on-resistance per silicon area.

Advanced Process Technology

P-Channel MOSFET

Ultra Low On-Resistance

Dynamic dv/dt Rating

Fast Switching

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