Infineon HEXFET Type P-Channel MOSFET, 38 A, 100 V Enhancement, 3-Pin TO-263 AUIRF5210STRL

View all MOSFETs
Bulk discount available

Subtotal (1 pack of 5 units)*

€32.87

(exc. VAT)

€40.43

(inc. VAT)

Add to Basket
Select or type quantity
Last RS stock
  • Final 40 unit(s), ready to ship from another location
Units
Per unit
Per Pack*
5 - 5€6.574€32.87
10 - 20€5.654€28.27
25 - 45€5.26€26.30
50 - 120€4.932€24.66
125 +€4.538€22.69

*price indicative

Packaging Options:
RS Stock No.:
218-2972
Mfr. Part No.:
AUIRF5210STRL
Manufacturer:
Infineon
Find similar products by selecting one or more attributes.
Select all

Brand

Infineon

Product Type

MOSFET

Channel Type

Type P

Maximum Continuous Drain Current Id

38A

Maximum Drain Source Voltage Vds

100V

Series

HEXFET

Package Type

TO-263

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

60mΩ

Channel Mode

Enhancement

Typical Gate Charge Qg @ Vgs

150nC

Minimum Operating Temperature

-55°C

Maximum Power Dissipation Pd

3.1W

Maximum Gate Source Voltage Vgs

20 V

Forward Voltage Vf

-1.6V

Maximum Operating Temperature

150°C

Length

10.67mm

Standards/Approvals

No

Width

9.65 mm

Height

4.83mm

Automotive Standard

AEC-Q101

The Infineon P-channel automotive MOSFET. It is specifically designed for automotive applications. This cellular design of HEXFET® Power MOSFETs utilizes the latest processing techniques to achieve low on-resistance per silicon area.

Advanced Process Technology

P-Channel MOSFET

Ultra Low On-Resistance

Dynamic dv/dt Rating

Fast Switching

Related links