P-Channel MOSFET, 70 A, 55 V, 3-Pin D2PAK Infineon IRF4905STRLPBF

Infineon's range of discrete HEXFET® power MOSFETs includes P-channel devices in surface mount and leaded packages and form factors that can address almost any board layout and thermal design challenge. Across the range benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.

This high current MOSFET is suitable for various applications within automation and electronics. With a maximum continuous drain current of 70A, it operates at drain-source voltages up to 55V. Its enhancement mode configuration meets performance requirements, while its low RDS(on) maximises energy efficiency. Designed for high power applications, this MOSFET offers thermal stability, making it appropriate for rigorous operating conditions.

• Improves system efficiency through low on-resistance values
• Functions effectively within a temperature range of -55°C to +150°C
• Supports fast switching speeds to enhance performance
• Features robust design for repetitive avalanche conditions
• Provided in a D2PAK TO-263 package for straightforward surface mounting

• Used in power management systems and converters
• Appropriate for motor control requiring high efficiency
• Integrated into switching power supplies for enhanced performance
• Applicable in automotive environments needing dependable control
• Employed in industrial automation requiring substantial power handling

The device has a maximum operating temperature of +150°C, ensuring stability under varying environmental conditions.

Low RDS(on) minimises conduction losses, enhancing overall circuit efficiency and enabling cooler operation.

Yes, it is capable of managing pulsed drain currents up to 280 A, making it suitable for dynamic applications.

The gate-to-source voltage should remain within the range of -20 V to +20 V to guarantee effective operation without risk of damage.

MOSFET Transistors, Infineon

Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.