Infineon OptiMOS 5 N-Channel MOSFET, 174 A, 150 V N, 7-Pin TO-263 IPB044N15N5ATMA1
- RS Stock No.:
- 218-3029
- Mfr. Part No.:
- IPB044N15N5ATMA1
- Manufacturer:
- Infineon
Bulk discount available
View bulk pricing optionsSubtotal (1 pack of 2 units)*
€10.70
(exc. VAT)
€13.16
(inc. VAT)
In Stock
- 750 unit(s) ready to ship from another location
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Units | Per unit | Per Pack* |
|---|---|---|
| 2 - 8 | €5.35 | €10.70 |
| 10 - 18 | €4.82 | €9.64 |
| 20 - 48 | €4.555 | €9.11 |
| 50 - 98 | €4.225 | €8.45 |
| 100 + | €3.905 | €7.81 |
*price indicative
- RS Stock No.:
- 218-3029
- Mfr. Part No.:
- IPB044N15N5ATMA1
- Manufacturer:
- Infineon
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 174A | |
| Maximum Drain Source Voltage Vds | 150V | |
| Package Type | TO-263 | |
| Series | OptiMOS 5 | |
| Mount Type | Surface | |
| Pin Count | 7 | |
| Maximum Drain Source Resistance Rds | 4.4mΩ | |
| Channel Mode | N | |
| Forward Voltage Vf | 1.1V | |
| Maximum Power Dissipation Pd | 300W | |
| Maximum Gate Source Voltage Vgs | 20V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | +175°C | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 174A | ||
Maximum Drain Source Voltage Vds 150V | ||
Package Type TO-263 | ||
Series OptiMOS 5 | ||
Mount Type Surface | ||
Pin Count 7 | ||
Maximum Drain Source Resistance Rds 4.4mΩ | ||
Channel Mode N | ||
Forward Voltage Vf 1.1V | ||
Maximum Power Dissipation Pd 300W | ||
Maximum Gate Source Voltage Vgs 20V | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature +175°C | ||
Standards/Approvals No | ||
Automotive Standard No | ||
Infineon OptiMOS 5 Series MOSFET, 150V Drain Source Voltage, 174A Continuous Drain Current - IPB044N15N5ATMA1
This MOSFET is a power-switching transistor designed for high-current, high-voltage applications where thermal resilience and surface mounting are required. It operates across a wide temperature range and is configured as an N‑channel device in a TO-263 surface-mount package, suitable for integration into converter and inverter topologies.
Features and Benefits:
• Low on-resistance 4.4mΩ reduces conduction losses and heat generation
• High continuous drain current 174A supports heavy-load operation
• Drain-source voltage rating 150V enables high-voltage switching
• Maximum power dissipation 300W allows sustained power handling
• Gate-source voltage limit 20V accommodates standard gate drive levels
• Forward voltage 1.1V minimises drop during conduction at rated currents
• High continuous drain current 174A supports heavy-load operation
• Drain-source voltage rating 150V enables high-voltage switching
• Maximum power dissipation 300W allows sustained power handling
• Gate-source voltage limit 20V accommodates standard gate drive levels
• Forward voltage 1.1V minimises drop during conduction at rated currents
Applications
• Suitable for DC-DC converters in power distribution systems
• Used for inverter stages in motor-drive assemblies
• Ideal for high-current switching in server power supplies
• Can be used for power management in industrial control equipment
• Used with heat-sinking solutions in high-power assemblies
• Used for inverter stages in motor-drive assemblies
• Ideal for high-current switching in server power supplies
• Can be used for power management in industrial control equipment
• Used with heat-sinking solutions in high-power assemblies
What thermal extremes can this device withstand during operation?
It is specified for operation from −55°C up to +175°C, enabling use in environments with severe temperature variation.
What mounting and pin configuration should be expected for PCB layout?
The component is supplied in a TO-263 surface-mount package with seven pins, requiring corresponding land pattern and thermal pad considerations.
Which conduction type and channel mode are implemented internally?
The device uses an N‑channel, enhancement‑mode configuration suitable for low-side or high-side switching with appropriate gate drive.
How does the device perform in terms of power handling for continuous operation?
It has a maximum continuous drain current of 174A and a maximum power dissipation rated at 300W for sustained power applications.
Related links
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