Essential and Operational Technologies

These cookies make our website work. This includes product images and videos, functionality for the basket, logging in, remembering your username, registration and My Account.

We use optimisation cookies to test new features and designs on our website. The information collected helps us improve our website and our customers' experience.

Advertising

These cookies are used to understand the performance and relevancy of our adverts, to provide you with personalised adverts on other websites and social media, to track when you have arrived at our site from a recognised third-party affiliate website, and to track if you made a purchase based on the adverts we displayed to you.

Recommendations

These cookies enable us to provide personalised product and content recommendations, to make the browsing experience more relevant to you.

Functionality

These cookies are used to offer customer surveys and feedback, to improve search results, and to allow you to share content from our website on social media.

Analytics

These cookies help us improve our website by collecting and reporting information on how you use it.

Select all	Attribute	Value
	Brand	Infineon
	Channel Type	N
	Maximum Continuous Drain Current	120 A
	Maximum Drain Source Voltage	60 V
	Package Type	D2PAK (TO-263)
	Series	OptiMOS™ -T2
	Mounting Type	Through Hole
	Pin Count	3
	Maximum Drain Source Resistance	0.002 Ω
	Channel Mode	Enhancement
	Maximum Gate Threshold Voltage	4V
	Transistor Material	Si
	Number of Elements per Chip	1

	Select all
	Brand Infineon
	Channel Type N
	Maximum Continuous Drain Current 120 A
	Maximum Drain Source Voltage 60 V
	Package Type D2PAK (TO-263)
	Series OptiMOS™ -T2
	Mounting Type Through Hole
	Pin Count 3
	Maximum Drain Source Resistance 0.002 Ω
	Channel Mode Enhancement
	Maximum Gate Threshold Voltage 4V
	Transistor Material Si
	Number of Elements per Chip 1

Infineon OptiMOS™ -T2 N-Channel MOSFET, 120 A, 60 V, 3-Pin D2PAK IPB120N06S4H1ATMA2

Related links