Infineon HEXFET Type P-Channel MOSFET, 13 A, 150 V, 3-Pin TO-263 IRF6215STRLPBF
- RS Stock No.:
- 218-3098
- Mfr. Part No.:
- IRF6215STRLPBF
- Manufacturer:
- Infineon
Bulk discount available
Subtotal (1 pack of 15 units)*
€24.255
(exc. VAT)
€29.835
(inc. VAT)
Stock information currently inaccessible - Please check back later
Units | Per unit | Per Pack* |
|---|---|---|
| 15 - 60 | €1.617 | €24.26 |
| 75 - 135 | €1.537 | €23.06 |
| 150 - 360 | €1.504 | €22.56 |
| 375 - 735 | €1.407 | €21.11 |
| 750 + | €1.311 | €19.67 |
*price indicative
- RS Stock No.:
- 218-3098
- Mfr. Part No.:
- IRF6215STRLPBF
- Manufacturer:
- Infineon
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Product Type | MOSFET | |
| Channel Type | Type P | |
| Maximum Continuous Drain Current Id | 13A | |
| Maximum Drain Source Voltage Vds | 150V | |
| Package Type | TO-263 | |
| Series | HEXFET | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 290mΩ | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Typical Gate Charge Qg @ Vgs | 44nC | |
| Forward Voltage Vf | -1.6V | |
| Maximum Power Dissipation Pd | 110W | |
| Length | 10.67mm | |
| Width | 9.65 mm | |
| Standards/Approvals | No | |
| Height | 4.83mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Product Type MOSFET | ||
Channel Type Type P | ||
Maximum Continuous Drain Current Id 13A | ||
Maximum Drain Source Voltage Vds 150V | ||
Package Type TO-263 | ||
Series HEXFET | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 290mΩ | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Typical Gate Charge Qg @ Vgs 44nC | ||
Forward Voltage Vf -1.6V | ||
Maximum Power Dissipation Pd 110W | ||
Length 10.67mm | ||
Width 9.65 mm | ||
Standards/Approvals No | ||
Height 4.83mm | ||
Automotive Standard No | ||
The Infineon IRF series single P-Channel power MOSFET. This MOSFET utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. It is suitable for high current applications.
Fast switching
P-channel
175°C Operating Temperature
Related links
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