DiodesZetex Dual DMN Type N-Channel MOSFET, 261 mA, 60 V Enhancement, 6-Pin SOT-363 DMN62D4LDW-7

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Subtotal (1 pack of 50 units)*

€8.35

(exc. VAT)

€10.25

(inc. VAT)

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Units
Per unit
Per Pack*
50 - 50€0.167€8.35
100 - 200€0.081€4.05
250 - 450€0.079€3.95
500 - 950€0.075€3.75
1000 +€0.073€3.65

*price indicative

Packaging Options:
RS Stock No.:
222-2844
Mfr. Part No.:
DMN62D4LDW-7
Manufacturer:
DiodesZetex
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Brand

DiodesZetex

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

261mA

Maximum Drain Source Voltage Vds

60V

Package Type

SOT-363

Series

DMN

Mount Type

Surface

Pin Count

6

Maximum Drain Source Resistance Rds

3Ω

Channel Mode

Enhancement

Minimum Operating Temperature

-55°C

Forward Voltage Vf

0.8V

Typical Gate Charge Qg @ Vgs

0.51nC

Maximum Power Dissipation Pd

0.45W

Maximum Gate Source Voltage Vgs

20 V

Transistor Configuration

Dual

Maximum Operating Temperature

150°C

Standards/Approvals

RoHS

Automotive Standard

AEC-Q200, AEC-Q101, AEC-Q100

The DiodesZetex Dual n-channel enhancement mode MOSFET is designed to minimize the on-state resistance (RDS(ON)) yet maintain superior switching performance, making it ideal for high efficiency power management applications.

Dual N-Channel MOSFET

Low On-Resistance

Low Gate Threshold Voltage

Low Input Capacitance

Fast Switching Speed

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