Infineon IPT Type N-Channel MOSFET, 333 A, 80 V, 8-Pin HSOF-8 IPT013N08NM5LFATMA1
- RS Stock No.:
- 236-1587
- Mfr. Part No.:
- IPT013N08NM5LFATMA1
- Manufacturer:
- Infineon
Bulk discount available
Subtotal (1 unit)*
€6.87
(exc. VAT)
€8.45
(inc. VAT)
Temporarily out of stock
- 3 unit(s) shipping from 05 January 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit |
|---|---|
| 1 - 9 | €6.87 |
| 10 - 24 | €6.53 |
| 25 - 49 | €6.25 |
| 50 - 99 | €5.99 |
| 100 + | €5.57 |
*price indicative
- RS Stock No.:
- 236-1587
- Mfr. Part No.:
- IPT013N08NM5LFATMA1
- Manufacturer:
- Infineon
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 333A | |
| Maximum Drain Source Voltage Vds | 80V | |
| Package Type | HSOF-8 | |
| Series | IPT | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 1.3mΩ | |
| Minimum Operating Temperature | -55°C | |
| Forward Voltage Vf | 1V | |
| Typical Gate Charge Qg @ Vgs | 158nC | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Power Dissipation Pd | 278W | |
| Maximum Operating Temperature | 150°C | |
| Width | 10.58 mm | |
| Standards/Approvals | No | |
| Height | 2.4mm | |
| Length | 10.1mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 333A | ||
Maximum Drain Source Voltage Vds 80V | ||
Package Type HSOF-8 | ||
Series IPT | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 1.3mΩ | ||
Minimum Operating Temperature -55°C | ||
Forward Voltage Vf 1V | ||
Typical Gate Charge Qg @ Vgs 158nC | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Power Dissipation Pd 278W | ||
Maximum Operating Temperature 150°C | ||
Width 10.58 mm | ||
Standards/Approvals No | ||
Height 2.4mm | ||
Length 10.1mm | ||
Automotive Standard No | ||
The Infineon OptiMOS 5 Linear FET, 80 V MOSFET . This product is fully qualified according to JEDEC for industrial applications .
Ideal for hot-swap and e-fuse applications
Very low on-resistance RDS(on)
Wide safe operating area SOA
N-channel, normal level
100% avalanche tested
Pb-free plating, halogen-free
Related links
- Infineon N-Channel MOSFET 80 V, 8-Pin HSOF-8 IPT013N08NM5LFATMA1
- Infineon OptiMOS™ 5 Silicon N-Channel MOSFET 80 V, 8-Pin HSOF-8 IAUT165N08S5N029ATMA2
- Infineon OptiMOS™ 5 N-Channel MOSFET 80 V, 8-Pin HSOF-8 IPT010N08NM5ATMA1
- Infineon OptiMOS™ 5 N-Channel MOSFET 80 V, 8-Pin HSOF-8 IAUT240N08S5N019ATMA1
- Infineon OptiMOS™ 5 N-Channel MOSFET Transistor & Diode 80 V, 8-Pin HSOF-8 IAUT200N08S5N023ATMA1
- Infineon OptiMOS™ 5 Silicon N-Channel MOSFET 80 V, 8-Pin HSOF-8 IAUT300N08S5N012ATMA2
- Infineon N-Channel MOSFET 150 V, 8-Pin HSOF-8 IPT054N15N5ATMA1
- Infineon N-Channel MOSFET 150 V, 8-Pin HSOF-8 IPT039N15N5ATMA1