Vishay SISA10BDN Type N-Channel MOSFET, 104 A, 30 V, 8-Pin PowerPAK 1212-8PT SISA10BDN-T1-GE3

RS Stock No.:: 239-5398
Mfr. Part No.:: SISA10BDN-T1-GE3
Manufacturer:: Vishay

Vishay SISA10BDN Type N-Channel MOSFET, 104 A, 30 V, 8-Pin PowerPAK 1212-8PT SISA10BDN-T1-GE3

Subtotal (1 pack of 10 units)*

€6.75

(exc. VAT)

€8.30

(inc. VAT)

In Stock

6,030 unit(s) ready to ship from another location

Need more? Click ‘Check delivery dates’ to find extra stock and lead times.

Units	Per unit	Per Pack*
10 +	€0.675	€6.75

*price indicative

RS Stock No.:: 239-5398
Mfr. Part No.:: SISA10BDN-T1-GE3
Manufacturer:: Vishay

Specifications

Technical data sheets

Legislation and Compliance

Product Details

Find similar products by selecting one or more attributes.

Select all	Attribute	Value
	Brand	Vishay
	Product Type	MOSFET
	Channel Type	Type N
	Maximum Continuous Drain Current Id	104A
	Maximum Drain Source Voltage Vds	30V
	Package Type	PowerPAK 1212-8PT
	Series	SISA10BDN
	Mount Type	Surface
	Pin Count	8
	Maximum Drain Source Resistance Rds	0.0036Ω
	Typical Gate Charge Qg @ Vgs	11.7nC
	Minimum Operating Temperature	-55°C
	Maximum Power Dissipation Pd	63W
	Maximum Gate Source Voltage Vgs	20V
	Forward Voltage Vf	1.1V
	Maximum Operating Temperature	150°C
	Standards/Approvals	RoHS
	Width	3.3mm
	Height	0.75mm
	Length	3.3mm
	Automotive Standard	No

	Select all
	Brand Vishay
	Product Type MOSFET
	Channel Type Type N
	Maximum Continuous Drain Current Id 104A
	Maximum Drain Source Voltage Vds 30V
	Package Type PowerPAK 1212-8PT
	Series SISA10BDN
	Mount Type Surface
	Pin Count 8
	Maximum Drain Source Resistance Rds 0.0036Ω
	Typical Gate Charge Qg @ Vgs 11.7nC
	Minimum Operating Temperature -55°C
	Maximum Power Dissipation Pd 63W
	Maximum Gate Source Voltage Vgs 20V
	Forward Voltage Vf 1.1V
	Maximum Operating Temperature 150°C
	Standards/Approvals RoHS
	Width 3.3mm
	Height 0.75mm
	Length 3.3mm
	Automotive Standard No

Vishay SISA10BDN Series MOSFET, 30V Maximum Drain Source Voltage, 104A Maximum Continuous Drain Current - SISA10BDN-T1-GE3

This n-channel MOSFET is a surface-mount power transistor designed for high-current switching in compact electronic assemblies. It operates across a wide temperature range and is suitable for demanding thermal environments where efficient conduction and fast gate response are required. The device is offered in a low-profile package optimised for assembly onto densely populated boards.

Features and Benefits:

• Very low on-resistance 0.0036Ω enables reduced conduction losses
• High continuous drain current 104A supports heavy-load switching
• Drain-source voltage rating 30V allows low-voltage power designs
• Typical gate charge 11.7nC yields quicker gate drive transitions
• Maximum power dissipation 63W permits sustained thermal load handling
• Gate-source withstand 20V provides headroom for diverse drive voltages

Applications

• Suitable for synchronous buck regulator switching stages
• Ideal for motor driver half-bridges in compact inverters
• Used with high-current load switches in server power rails
• Can be used for battery management in high-drain systems
• Suitable for solid-state relays and automotive-style power modules

What mounting method is required for reliable assembly?

It is a surface-mount component in a PowerPAK 1212-8PT format, intended for reflow soldering to a PCB footprint designed for thermal and electrical contact.

How does ambient temperature affect operating capability?

The device is specified to function from -55°C up to 150°C, permitting operation in both sub-zero and elevated-temperature environments with appropriate thermal management.

What type of conduction channel does it use?

It employs an N-type channel, which is suitable for low-voltage, high-current switching applications.

Is the device compliant with environmental restrictions?

It meets RoHS requirements, indicating it lacks restricted hazardous substances under the standard.