The Microchip silicon carbide power MOSFET product line from Micro semi increases the performance over silicon MOSFET and silicon IGBT solutions while lowering the total cost of ownership for high voltage applications.
Low capacitances and low gate charge Fast switching speed due to low internal gate resistance Stable operation at high junction temperature TJ(max) equal to 175 °C Fast and reliable body diode Superior avalanche ruggedness RoHS compliant