Infineon BSP Type N-Channel MOSFET, 0.68 A, 100 V Enhancement, 3-Pin SOT-223 BSP316PH6327XTSA1

View all MOSFETs
Bulk discount available

Subtotal (1 pack of 5 units)*

€2.28

(exc. VAT)

€2.805

(inc. VAT)

Add to Basket
Select or type quantity
In Stock
  • 1,930 unit(s) ready to ship from another location
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units
Per unit
Per Pack*
5 - 45€0.456€2.28
50 - 120€0.40€2.00
125 - 245€0.374€1.87
250 - 495€0.346€1.73
500 +€0.324€1.62

*price indicative

Packaging Options:
RS Stock No.:
250-0536
Mfr. Part No.:
BSP316PH6327XTSA1
Manufacturer:
Infineon
Find similar products by selecting one or more attributes.
Select all

Brand

Infineon

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

0.68A

Maximum Drain Source Voltage Vds

100V

Package Type

SOT-223

Series

BSP

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

1.4mΩ

Channel Mode

Enhancement

Maximum Gate Source Voltage Vgs

20 V

Typical Gate Charge Qg @ Vgs

80nC

Forward Voltage Vf

1V

Maximum Power Dissipation Pd

81W

Minimum Operating Temperature

-55°C

Maximum Operating Temperature

175°C

Standards/Approvals

RoHS

Automotive Standard

AEC-Q101

Distrelec Product Id

304-40-496

The Infineon makes this SIPMOS, Small-Signal-Transistor P-Channel, Enhancement mode mosfet. The device is dv/dt rated, P-channel, Enhancement mode transistor widely used in high-switching applications. It is avalanche rated and halogen-free.

Vds is 100 V, RDS(on) 1.8 Ω and Id is 0.68 A

Maximum power dissipation is 360 mW

Related links