Vishay Type N-Channel MOSFET, 421 A, 30 V Enhancement, 8-Pin PowerPAK SO-8DC SIDR500EP-T1-RE3

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Subtotal (1 pack of 2 units)*

€8.74

(exc. VAT)

€10.76

(inc. VAT)

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  • 884 unit(s) ready to ship from another location
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Units
Per unit
Per Pack*
2 - 18€4.37€8.74
20 - 98€4.115€8.23
100 - 198€3.71€7.42
200 - 498€3.49€6.98
500 +€3.28€6.56

*price indicative

Packaging Options:
RS Stock No.:
252-0249
Mfr. Part No.:
SIDR500EP-T1-RE3
Manufacturer:
Vishay
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Brand

Vishay

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

421A

Maximum Drain Source Voltage Vds

30V

Package Type

PowerPAK SO-8DC

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

0.00068mΩ

Channel Mode

Enhancement

Minimum Operating Temperature

-55°C

Forward Voltage Vf

1.1V

Maximum Power Dissipation Pd

150W

Typical Gate Charge Qg @ Vgs

46.1nC

Maximum Operating Temperature

175°C

Length

6.15mm

Standards/Approvals

No

Automotive Standard

AEC-Q101

The Vishay siliconix MOSFET product line includes a diverse range of advanced technologies. MOSFETs are transistor devices which are controlled by a capacitor. The field effect means that they are controlled by voltage. N-Channel MOSFETs contain additional electrons which are free to move around. They are a more popular channel type. N-Channel MOSFETs work when a positive charge is applied to the gate terminal.

TrenchFET Gen V power MOSFET

Very low RDS x Qg figure-of-merit (FOM)

Higher power density with very low RDS(on)

Thermally enhanced compact package

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