DiodesZetex DMN2040U Type N-Channel MOSFET, 6 A, 20 V Enhancement, 3-Pin SOT-23 DMN2055UQ-7
- RS Stock No.:
- 254-8602
- Mfr. Part No.:
- DMN2055UQ-7
- Manufacturer:
- DiodesZetex
Bulk discount available
Subtotal (1 pack of 25 units)*
€1.675
(exc. VAT)
€2.05
(inc. VAT)
In Stock
- 2,900 unit(s) ready to ship from another location
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 25 - 25 | €0.067 | €1.68 |
| 50 - 75 | €0.066 | €1.65 |
| 100 - 225 | €0.036 | €0.90 |
| 250 - 975 | €0.035 | €0.88 |
| 1000 + | €0.029 | €0.73 |
*price indicative
- RS Stock No.:
- 254-8602
- Mfr. Part No.:
- DMN2055UQ-7
- Manufacturer:
- DiodesZetex
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | DiodesZetex | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 6A | |
| Maximum Drain Source Voltage Vds | 20V | |
| Series | DMN2040U | |
| Package Type | SOT-23 | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 33mΩ | |
| Channel Mode | Enhancement | |
| Forward Voltage Vf | 1.2V | |
| Maximum Power Dissipation Pd | 1.36W | |
| Typical Gate Charge Qg @ Vgs | 7.5nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | 12 V | |
| Maximum Operating Temperature | 150°C | |
| Width | 1.4 mm | |
| Standards/Approvals | No | |
| Length | 3mm | |
| Height | 1mm | |
| Automotive Standard | AEC-Q101 | |
| Select all | ||
|---|---|---|
Brand DiodesZetex | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 6A | ||
Maximum Drain Source Voltage Vds 20V | ||
Series DMN2040U | ||
Package Type SOT-23 | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 33mΩ | ||
Channel Mode Enhancement | ||
Forward Voltage Vf 1.2V | ||
Maximum Power Dissipation Pd 1.36W | ||
Typical Gate Charge Qg @ Vgs 7.5nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs 12 V | ||
Maximum Operating Temperature 150°C | ||
Width 1.4 mm | ||
Standards/Approvals No | ||
Length 3mm | ||
Height 1mm | ||
Automotive Standard AEC-Q101 | ||
The DiodeZetex enhancement mode MOSFET has been designed to minimize the on-state resistance yet maintain superior switching performance, making it ideal for high efficiency power management applications. It is applicable in general purpose interfacing sw
Low on resistance
Low input capacitance
ESD protected gate
Halogen and antimony Free
Related links
- DiodesZetex DMN2040U Type N-Channel MOSFET 20 V Enhancement, 3-Pin SOT-23
- DiodesZetex DMN2040U Type N-Channel MOSFET 20 V Enhancement, 3-Pin SOT-23 DMN2040U-7
- DiodesZetex DMN2040U Type N-Channel MOSFET 20 V Enhancement, 3-Pin SOT-23 DMN2053UQ-7
- DiodesZetex DMN2040U Type N-Channel MOSFET 20 V Enhancement, 3-Pin SOT-23 DMN2053UQ-13
- Vishay SQ Rugged Type N-Channel TrenchFET Power MOSFET 20 V Enhancement, 3-Pin SOT-23
- Vishay SQ Rugged Type N-Channel TrenchFET Power MOSFET 20 V Enhancement, 3-Pin SOT-23 SQ2310ES-T1_BE3
- DiodesZetex Type N-Channel MOSFET 60 V Enhancement, 3-Pin SOT-23
- DiodesZetex DMN61D9U Type N-Channel MOSFET 60 V Enhancement, 3-Pin SOT-23