Vishay SI5936DU Type N-Channel MOSFET, 6 A, 30 V, 8-Pin PowerPAK ChipFET SI5936DU-T1-GE3
- RS Stock No.:
- 256-7377
- Mfr. Part No.:
- SI5936DU-T1-GE3
- Manufacturer:
- Vishay
Bulk discount available
View bulk pricing optionsSubtotal (1 pack of 5 units)*
€6.07
(exc. VAT)
€7.465
(inc. VAT)
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- 2,040 left, ready to ship from another location
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Units | Per unit | Per Pack* |
|---|---|---|
| 5 - 45 | €1.214 | €6.07 |
| 50 - 95 | €1.088 | €5.44 |
| 100 - 245 | €0.85 | €4.25 |
| 250 - 995 | €0.828 | €4.14 |
| 1000 + | €0.552 | €2.76 |
*price indicative
- RS Stock No.:
- 256-7377
- Mfr. Part No.:
- SI5936DU-T1-GE3
- Manufacturer:
- Vishay
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Vishay | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 6A | |
| Maximum Drain Source Voltage Vds | 30V | |
| Series | SI5936DU | |
| Package Type | PowerPAK ChipFET | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 0.04Ω | |
| Maximum Gate Source Voltage Vgs | 20V | |
| Typical Gate Charge Qg @ Vgs | 3.5nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 10.4W | |
| Forward Voltage Vf | 1.2V | |
| Maximum Operating Temperature | +150°C | |
| Height | 0.85mm | |
| Standards/Approvals | RoHS | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Vishay | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 6A | ||
Maximum Drain Source Voltage Vds 30V | ||
Series SI5936DU | ||
Package Type PowerPAK ChipFET | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 0.04Ω | ||
Maximum Gate Source Voltage Vgs 20V | ||
Typical Gate Charge Qg @ Vgs 3.5nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 10.4W | ||
Forward Voltage Vf 1.2V | ||
Maximum Operating Temperature +150°C | ||
Height 0.85mm | ||
Standards/Approvals RoHS | ||
Automotive Standard No | ||
Vishay SI5936DU Series MOSFET, 30V Maximum Drain Source Voltage, 6A Maximum Continuous Drain Current - SI5936DU-T1-GE3
This MOSFET is a surface-mount N-channel switching transistor designed for power-management duties in compact electronic assemblies. It operates across a wide ambient range and is intended for applications requiring efficient low-voltage switching and heat-handling in tight footprints.
Features and Benefits:
• 30V rating enables robust low-voltage switching capability
• 6A continuous current supports moderate power delivery
• 0.04 Ω Rds(on) minimises conduction losses
• 3.5 nC typical gate charge allows fast gate transitions
• 10.4W maximum dissipation handles significant thermal load
• 20V gate tolerance permits flexible drive-voltage choices
• 6A continuous current supports moderate power delivery
• 0.04 Ω Rds(on) minimises conduction losses
• 3.5 nC typical gate charge allows fast gate transitions
• 10.4W maximum dissipation handles significant thermal load
• 20V gate tolerance permits flexible drive-voltage choices
Applications
• Suitable for DC-DC converter output stage use
• Ideal for battery-management and power-path control
• Used with motor-driver stages for low-voltage motors
• Can be used for load switching in telecoms equipment
• Appropriate for compact power modules with height constraints
• Ideal for battery-management and power-path control
• Used with motor-driver stages for low-voltage motors
• Can be used for load switching in telecoms equipment
• Appropriate for compact power modules with height constraints
What package format should I plan for in PCB layout?
The device arrives in a PowerPAK ChipFET surface-mount style, so pad layouts must match a low-profile SMT footprint and allow thermal vias or copper pours for heat spread.
How does temperature affect continuous operation limits?
The component is specified to function from -55 °C to +150 °C, but thermal management is required to maintain power dissipation within ratings at elevated case temperatures.
What gate-drive considerations are there for switching performance?
Expect moderate gate-charge demand
driver capability should supply the typical 3.5 nC charge quickly to reduce switching losses while controlling dv/dt.
Is this suitable for automotive applications?
It is not designated to automotive standards, so it should not be used where automotive qualification is mandatory.
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