Infineon IPT Type N-Channel MOSFET, 247 A, 80 V HSOF
- RS Stock No.:
- 258-3902
- Mfr. Part No.:
- IPT019N08N5ATMA1
- Manufacturer:
- Infineon
Subtotal (1 reel of 2000 units)*
€3,130.00
(exc. VAT)
€3,850.00
(inc. VAT)
Temporarily out of stock
- Shipping from 17 June 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Reel* |
|---|---|---|
| 2000 + | €1.565 | €3,130.00 |
*price indicative
- RS Stock No.:
- 258-3902
- Mfr. Part No.:
- IPT019N08N5ATMA1
- Manufacturer:
- Infineon
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 247A | |
| Maximum Drain Source Voltage Vds | 80V | |
| Series | IPT | |
| Package Type | HSOF | |
| Mount Type | Surface | |
| Maximum Drain Source Resistance Rds | 2.9mΩ | |
| Forward Voltage Vf | 1.2V | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 247A | ||
Maximum Drain Source Voltage Vds 80V | ||
Series IPT | ||
Package Type HSOF | ||
Mount Type Surface | ||
Maximum Drain Source Resistance Rds 2.9mΩ | ||
Forward Voltage Vf 1.2V | ||
Standards/Approvals No | ||
Automotive Standard No | ||
The Infineon OptiMOS 5 80V n-channel power MOSFET in TO-Leadless package is ideally suited for high switching frequencies. This package is especially designed for high current applications such as forklift, light electric vehicles, POL and telecom. With a 60% space reduction compared to D2PAK 7pin package, TO-leadless is the perfect solution where highest efficiency, outstanding EMI behaviour as well as best thermal behaviour and space reduction are required.
Optimized for synchronous rectification
Ideal for high switching frequency
Less paralleling required
Increased power density
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