Infineon HEXFET Type N-Channel MOSFET, 68 A, 80 V WDSON

RS Stock No.:: 258-3962
Mfr. Part No.:: IRF6646TRPBF
Manufacturer:: Infineon

Infineon HEXFET Type N-Channel MOSFET, 68 A, 80 V WDSON

Subtotal (1 reel of 4800 units)*

€4,454.40

(exc. VAT)

€5,476.80

(inc. VAT)

Temporarily out of stock

Shipping from 24 April 2026

Need more? Click ‘Check delivery dates’ to find extra stock and lead times.

Units	Per unit	Per Reel*
4800 +	€0.928	€4,454.40

*price indicative

RS Stock No.:: 258-3962
Mfr. Part No.:: IRF6646TRPBF
Manufacturer:: Infineon

Specifications

Technical data sheets

Legislation and Compliance

Product Details

Find similar products by selecting one or more attributes.

Select all	Attribute	Value
	Brand	Infineon
	Product Type	MOSFET
	Channel Type	Type N
	Maximum Continuous Drain Current Id	68A
	Maximum Drain Source Voltage Vds	80V
	Package Type	WDSON
	Series	HEXFET
	Mount Type	Surface
	Maximum Drain Source Resistance Rds	9.5mΩ
	Minimum Operating Temperature	-40°C
	Maximum Power Dissipation Pd	89W
	Typical Gate Charge Qg @ Vgs	36nC
	Maximum Gate Source Voltage Vgs	20 V
	Forward Voltage Vf	1.3V
	Maximum Operating Temperature	150°C
	Standards/Approvals	RoHS
	Automotive Standard	No

	Select all
	Brand Infineon
	Product Type MOSFET
	Channel Type Type N
	Maximum Continuous Drain Current Id 68A
	Maximum Drain Source Voltage Vds 80V
	Package Type WDSON
	Series HEXFET
	Mount Type Surface
	Maximum Drain Source Resistance Rds 9.5mΩ
	Minimum Operating Temperature -40°C
	Maximum Power Dissipation Pd 89W
	Typical Gate Charge Qg @ Vgs 36nC
	Maximum Gate Source Voltage Vgs 20 V
	Forward Voltage Vf 1.3V
	Maximum Operating Temperature 150°C
	Standards/Approvals RoHS
	Automotive Standard No

Datasheet - IRF6646TRPBF

The Infineon HEXFET Power MOSFET Silicon technology with the advanced DirectFETTM packaging to achieve the lowest on-state resistance in a package that has the footprint of a SO-8 and only 0.7 mm profile. The DirectFET package is compatible with existing layout geometries used in power applications, PCB assembly equipment and vapour phase, infra-red or convection soldering techniques. Application note AN-1035 is followed regarding the manufacturing methods and processes.

Application Specific MOSFETs

Ideal for High Performance Isolated Converter

Primary Switch Socket

Optimized for Synchronous Rectification

Low Conduction Losses

High Cdv/dt Immunity

Low Profile (<0.7mm)

Dual Sided Cooling Compatible

Compatible with existing Surface Mount Technique

Infineon HEXFET Type N-Channel MOSFET, 68 A, 80 V WDSON

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