STMicroelectronics Type N-Channel MOSFET, 125 A, 100 V Enhancement, 8-Pin PowerFLAT STL120N10F8
- RS Stock No.:
- 261-5532
- Mfr. Part No.:
- STL120N10F8
- Manufacturer:
- STMicroelectronics
Subtotal (1 pack of 2 units)*
€4.68
(exc. VAT)
€5.76
(inc. VAT)
Stock information currently inaccessible - Please check back later
Units | Per unit | Per Pack* |
|---|---|---|
| 2 + | €2.34 | €4.68 |
*price indicative
- RS Stock No.:
- 261-5532
- Mfr. Part No.:
- STL120N10F8
- Manufacturer:
- STMicroelectronics
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | STMicroelectronics | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 125A | |
| Maximum Drain Source Voltage Vds | 100V | |
| Package Type | PowerFLAT | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 4.6mΩ | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 56nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand STMicroelectronics | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 125A | ||
Maximum Drain Source Voltage Vds 100V | ||
Package Type PowerFLAT | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 4.6mΩ | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 56nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals No | ||
Automotive Standard No | ||
- COO (Country of Origin):
- CN
N-channel enhancement mode standard level 100 V, 4.6 mOhm max., 125 A STripFET F8 Power MOSFET in a PowerFLAT 5x6 package
This STMicroelectronics N-channel Power MOSFET utilizes STripFET F8 technology featuring an enhanced trench gate structure.;It ensures very low on-state resistance while reducing internal capacitances and gate charge for faster and more efficient switching.
Key Features
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