Vishay SISS Type N-Channel MOSFET, 66.6 A, 80 V Enhancement, 8-Pin 1212-8S SISS5808DN-T1-GE3

View all MOSFETs
Bulk discount available

Subtotal (1 pack of 4 units)*

€7.332

(exc. VAT)

€9.02

(inc. VAT)

Add to Basket
Select or type quantity
In Stock
  • 6,000 unit(s) ready to ship from another location
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.

Units
Per unit
Per Pack*
4 - 56€1.833€7.33
60 - 96€1.795€7.18
100 - 236€1.758€7.03
240 - 996€1.723€6.89
1000 +€1.683€6.73

*price indicative

Packaging Options:
RS Stock No.:
280-0003
Mfr. Part No.:
SISS5808DN-T1-GE3
Manufacturer:
Vishay
Find similar products by selecting one or more attributes.
Select all

Brand

Vishay

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

66.6A

Maximum Drain Source Voltage Vds

80V

Series

SISS

Package Type

1212-8S

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

0.00745Ω

Channel Mode

Enhancement

Maximum Power Dissipation Pd

65.7W

Minimum Operating Temperature

-55°C

Typical Gate Charge Qg @ Vgs

24nC

Maximum Operating Temperature

150°C

Length

3.3mm

Standards/Approvals

RoHS

Automotive Standard

No

The Vishay MOSFET is a N-Channel MOSFET and the transistor in it is made up of material known as silicon.

TrenchFET power MOSFET

Fully lead (Pb)-free device

Very low RDS x Qg figure of merit

100 percent Rg and UIS tested

Related links