Vishay IRF620 Type N-Channel Power MOSFET, 5.2 A, 200 V Enhancement, 3-Pin TO-220AB IRF620PBF
- RS Stock No.:
- 543-0052
- Distrelec Article No.:
- 171-15-009
- Mfr. Part No.:
- IRF620PBF
- Manufacturer:
- Vishay
Bulk discount available
View bulk pricing optionsSubtotal (1 unit)*
€1.54
(exc. VAT)
€1.89
(inc. VAT)
In Stock
- 322 unit(s) ready to ship from another location
- Plus 918 unit(s) shipping from 13 August 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit |
|---|---|
| 1 - 9 | €1.54 |
| 10 - 49 | €1.40 |
| 50 - 99 | €1.33 |
| 100 - 249 | €1.16 |
| 250 + | €1.08 |
*price indicative
- RS Stock No.:
- 543-0052
- Distrelec Article No.:
- 171-15-009
- Mfr. Part No.:
- IRF620PBF
- Manufacturer:
- Vishay
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Vishay | |
| Product Type | Power MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 5.2A | |
| Maximum Drain Source Voltage Vds | 200V | |
| Package Type | TO-220AB | |
| Series | IRF620 | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 0.8Ω | |
| Channel Mode | Enhancement | |
| Forward Voltage Vf | 1.8V | |
| Maximum Power Dissipation Pd | 50W | |
| Maximum Gate Source Voltage Vgs | 20V | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 14nC | |
| Maximum Operating Temperature | 150°C | |
| Length | 10.41mm | |
| Width | 4.7mm | |
| Standards/Approvals | RoHS 2002/95/EC | |
| Height | 9.01mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Vishay | ||
Product Type Power MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 5.2A | ||
Maximum Drain Source Voltage Vds 200V | ||
Package Type TO-220AB | ||
Series IRF620 | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 0.8Ω | ||
Channel Mode Enhancement | ||
Forward Voltage Vf 1.8V | ||
Maximum Power Dissipation Pd 50W | ||
Maximum Gate Source Voltage Vgs 20V | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 14nC | ||
Maximum Operating Temperature 150°C | ||
Length 10.41mm | ||
Width 4.7mm | ||
Standards/Approvals RoHS 2002/95/EC | ||
Height 9.01mm | ||
Automotive Standard No | ||
Vishay IRF620 Series Power MOSFET, 200V Drain Source Voltage, 50W Power Dissipation - IRF620PBF
This power MOSFET is a high-voltage N-channel transistor intended for through-hole power electronics. It operates across a wide temperature span and is suited to switching and amplification tasks where a robust drain-source voltage capability is required. The component is presented in a conventional through-hole package to facilitate mounting in mixed-technology assemblies.
Features and Benefits:
• 200V drain-source rating enables high-voltage switching applications
• 0.8Ω on-resistance reduces conduction losses in low-current circuits
• 5.2A continuous drain current supports moderate power loads
• 50W power dissipation capacity allows sustained thermal stress handling
• 14nC typical gate charge promotes efficient gate driving at Vgs20V
• N-channel enhancement mode simplifies use in common switching topologies
• 0.8Ω on-resistance reduces conduction losses in low-current circuits
• 5.2A continuous drain current supports moderate power loads
• 50W power dissipation capacity allows sustained thermal stress handling
• 14nC typical gate charge promotes efficient gate driving at Vgs20V
• N-channel enhancement mode simplifies use in common switching topologies
Applications
• Suitable for power supplies handling high-voltage rails
• Ideal for motor control in small industrial drives
• Used with audio amplifiers requiring high-voltage transistors
• Can be used for DC-DC converters in bench equipment
• Appropriate for hobbyist and prototype through-hole assemblies
• Ideal for motor control in small industrial drives
• Used with audio amplifiers requiring high-voltage transistors
• Can be used for DC-DC converters in bench equipment
• Appropriate for hobbyist and prototype through-hole assemblies
What gate voltage should be applied for reliable switching?
The device accepts up to 20V between gate and source
use appropriate gate-drive voltages below this maximum to switch effectively.
How does thermal performance affect mounting choices?
With 50W maximum dissipation, a heatsink or adequate PCB copper area is recommended to maintain junction temperatures within safe limits during continuous operation.
What are the expected switching characteristics?
The typical gate charge of 14nC at the specified gate drive indicates moderate gate-drive energy requirements and influences switching speed and driver selection.
What environmental extremes can it tolerate?
It is specified for operation from -55°C up to 150°C, permitting use in a wide range of ambient and elevated-temperature environments.
Related links
- Vishay IRF620 Type N-Channel Power MOSFET 200 V Enhancement, 3-Pin TO-220AB IRF620PBF
- Vishay Single Type N-Channel Power MOSFET 200 V TO-220AB IRL620PBF
- Vishay Single IRF620S 1 Type N-Channel Power MOSFET 200 V, 3-Pin TO-263 IRF620SPBF
- Vishay SiHF620S Type N-Channel MOSFET 200 V Enhancement, 3-Pin TO-263 SIHF620S-GE3
- STMicroelectronics SuperMESH Type N-Channel Power MOSFET 800 V Enhancement, 3-Pin TO-220FP
- STMicroelectronics SuperMESH Type N-Channel Power MOSFET 800 V Enhancement, 3-Pin TO-220FP STP7NK80ZFP
- onsemi QFET Type P-Channel MOSFET 200 V Enhancement, 3-Pin TO-220 FQPF7P20
- onsemi QFET Type P-Channel MOSFET 200 V Enhancement, 3-Pin TO-220