N-Channel MOSFET, 5.2 A, 800 V, 3-Pin TO-220FP STMicroelectronics STP7NK80ZFP
- RS Stock No.:
- 168-6821
- Mfr. Part No.:
- STP7NK80ZFP
- Manufacturer:
- STMicroelectronics
Subtotal (1 tube of 50 units)**
€76.20
(exc. VAT)
€93.75
(inc. VAT)
* Delivery dates may change based on your chosen quantity and delivery address.
Units | Per unit | Per Tube** |
|---|---|---|
| 50 - 50 | €1.524 | €76.20 |
| 100 - 200 | €1.189 | €59.45 |
| 250 + | €1.07 | €53.50 |
**price indicative
- RS Stock No.:
- 168-6821
- Mfr. Part No.:
- STP7NK80ZFP
- Manufacturer:
- STMicroelectronics
Select all | Attribute | Value |
|---|---|---|
| Manufacturer | STMicroelectronics | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 5.2 A | |
| Maximum Drain Source Voltage | 800 V | |
| Series | MDmesh, SuperMESH | |
| Package Type | TO-220FP | |
| Mounting Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance | 1.8 Ω | |
| Channel Mode | Enhancement | |
| Maximum Gate Threshold Voltage | 4.5V | |
| Minimum Gate Threshold Voltage | 3V | |
| Maximum Power Dissipation | 30 W | |
| Transistor Configuration | Single | |
| Maximum Gate Source Voltage | -30 V, +30 V | |
| Length | 10.4mm | |
| Maximum Operating Temperature | +150 °C | |
| Transistor Material | Si | |
| Width | 4.6mm | |
| Number of Elements per Chip | 1 | |
| Typical Gate Charge @ Vgs | 40 nC @ 10 V | |
| Minimum Operating Temperature | -55 °C | |
| Height | 9.3mm | |
Select all | ||
|---|---|---|
Manufacturer STMicroelectronics | ||
Channel Type N | ||
Maximum Continuous Drain Current 5.2 A | ||
Maximum Drain Source Voltage 800 V | ||
Series MDmesh, SuperMESH | ||
Package Type TO-220FP | ||
Mounting Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance 1.8 Ω | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 4.5V | ||
Minimum Gate Threshold Voltage 3V | ||
Maximum Power Dissipation 30 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage -30 V, +30 V | ||
Length 10.4mm | ||
Maximum Operating Temperature +150 °C | ||
Transistor Material Si | ||
Width 4.6mm | ||
Number of Elements per Chip 1 | ||
Typical Gate Charge @ Vgs 40 nC @ 10 V | ||
Minimum Operating Temperature -55 °C | ||
Height 9.3mm | ||
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