onsemi PowerTrench Type N-Channel MOSFET, 12.5 A, 30 V Enhancement, 8-Pin SOIC FDS6680A
- RS Stock No.:
- 671-0605
- Mfr. Part No.:
- FDS6680A
- Manufacturer:
- onsemi
Bulk discount available
Subtotal (1 pack of 5 units)*
€3.55
(exc. VAT)
€4.35
(inc. VAT)
Supply shortage
- Plus 30 left, shipping from 26 January 2026
- Plus 2,115 left, shipping from 02 February 2026
Our current stock is limited and our suppliers are expecting shortages.
Units | Per unit | Per Pack* |
|---|---|---|
| 5 - 20 | €0.71 | €3.55 |
| 25 - 95 | €0.584 | €2.92 |
| 100 - 245 | €0.386 | €1.93 |
| 250 - 495 | €0.362 | €1.81 |
| 500 + | €0.348 | €1.74 |
*price indicative
- RS Stock No.:
- 671-0605
- Mfr. Part No.:
- FDS6680A
- Manufacturer:
- onsemi
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | onsemi | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 12.5A | |
| Maximum Drain Source Voltage Vds | 30V | |
| Package Type | SOIC | |
| Series | PowerTrench | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 10mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Power Dissipation Pd | 2.5W | |
| Typical Gate Charge Qg @ Vgs | 16nC | |
| Forward Voltage Vf | 0.7V | |
| Maximum Operating Temperature | 150°C | |
| Width | 4 mm | |
| Length | 5mm | |
| Standards/Approvals | No | |
| Height | 1.5mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand onsemi | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 12.5A | ||
Maximum Drain Source Voltage Vds 30V | ||
Package Type SOIC | ||
Series PowerTrench | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 10mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Power Dissipation Pd 2.5W | ||
Typical Gate Charge Qg @ Vgs 16nC | ||
Forward Voltage Vf 0.7V | ||
Maximum Operating Temperature 150°C | ||
Width 4 mm | ||
Length 5mm | ||
Standards/Approvals No | ||
Height 1.5mm | ||
Automotive Standard No | ||
PowerTrench® N-Channel MOSFET, 10A to 19.9A, Fairchild Semiconductor
MOSFET Transistors, ON Semi
ON Semi offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types. The Advanced silicon technology provides smaller die sizes, which it is incorporated into multiple industry-standard and thermally-enhanced packages.
ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.
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