Enhancement Mode N-Channel MOSFET, Fairchild Semiconductor

Enhancement Mode Field Effect Transistors (FET) are produced using Fairchild’s proprietary, high cell density, DMOS technology. This high density process has been designed to minimise on-state resistance, provide rugged and reliable performance and fast switching.

MOSFET Transistors, ON Semi

ON Semi offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types. The advanced silicon technology provides smaller die sizes, which it is incorporated into multiple industry-standard and thermally-enhanced packages.
ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.

Units	Per unit	Per Pack**
5 - 45	€0.788	€3.94
50 - 95	€0.68	€3.40
100 - 495	€0.59	€2.95
500 - 995	€0.518	€2.59
1000 +	€0.47	€2.35

Select all	Attribute	Value
	Manufacturer	onsemi
	Channel Type	N
	Maximum Continuous Drain Current	6.3 A
	Maximum Drain Source Voltage	30 V
	Package Type	SOT-223
	Mounting Type	Surface Mount
	Pin Count	3
	Maximum Drain Source Resistance	72 mΩ
	Channel Mode	Enhancement
	Minimum Gate Threshold Voltage	0.4V
	Maximum Power Dissipation	3 W
	Transistor Configuration	Single
	Maximum Gate Source Voltage	-8 V, +8 V
	Number of Elements per Chip	1
	Typical Gate Charge @ Vgs	10.7 nC @ 4.5 V
	Width	3.56mm
	Length	6.5mm
	Maximum Operating Temperature	+150 °C
	Transistor Material	Si
	Minimum Operating Temperature	-55 °C
	Height	1.6mm

	Select all
	Manufacturer onsemi
	Channel Type N
	Maximum Continuous Drain Current 6.3 A
	Maximum Drain Source Voltage 30 V
	Package Type SOT-223
	Mounting Type Surface Mount
	Pin Count 3
	Maximum Drain Source Resistance 72 mΩ
	Channel Mode Enhancement
	Minimum Gate Threshold Voltage 0.4V
	Maximum Power Dissipation 3 W
	Transistor Configuration Single
	Maximum Gate Source Voltage -8 V, +8 V
	Number of Elements per Chip 1
	Typical Gate Charge @ Vgs 10.7 nC @ 4.5 V
	Width 3.56mm
	Length 6.5mm
	Maximum Operating Temperature +150 °C
	Transistor Material Si
	Minimum Operating Temperature -55 °C
	Height 1.6mm

N-Channel MOSFET, 6.3 A, 30 V, 3-Pin SOT-223 onsemi FDT439N

Enhancement Mode N-Channel MOSFET, Fairchild Semiconductor

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