Essential and Operational Technologies

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Units	Per unit	Per Pack**
5 - 45	€2.148	€10.74
50 - 95	€1.85	€9.25
100 - 495	€1.606	€8.03
500 +	€1.412	€7.06

Select all	Attribute	Value
	Brand	onsemi
	Channel Type	P
	Maximum Continuous Drain Current	11.5 A
	Maximum Drain Source Voltage	200 V
	Package Type	D2PAK (TO-263)
	Mounting Type	Surface Mount
	Pin Count	3
	Maximum Drain Source Resistance	470 mΩ
	Channel Mode	Enhancement
	Minimum Gate Threshold Voltage	3V
	Maximum Power Dissipation	3.13 W
	Transistor Configuration	Single
	Maximum Gate Source Voltage	-30 V, +30 V
	Maximum Operating Temperature	+150 °C
	Number of Elements per Chip	1
	Typical Gate Charge @ Vgs	31 nC @ 10 V
	Length	10.67mm
	Transistor Material	Si
	Width	9.65mm
	Height	4.83mm
	Minimum Operating Temperature	-55 °C

	Select all
	Brand onsemi
	Channel Type P
	Maximum Continuous Drain Current 11.5 A
	Maximum Drain Source Voltage 200 V
	Package Type D2PAK (TO-263)
	Mounting Type Surface Mount
	Pin Count 3
	Maximum Drain Source Resistance 470 mΩ
	Channel Mode Enhancement
	Minimum Gate Threshold Voltage 3V
	Maximum Power Dissipation 3.13 W
	Transistor Configuration Single
	Maximum Gate Source Voltage -30 V, +30 V
	Maximum Operating Temperature +150 °C
	Number of Elements per Chip 1
	Typical Gate Charge @ Vgs 31 nC @ 10 V
	Length 10.67mm
	Transistor Material Si
	Width 9.65mm
	Height 4.83mm
	Minimum Operating Temperature -55 °C

onsemi P-Channel MOSFET, 11.5 A, 200 V, 3-Pin D2PAK FQB12P20TM

Enhancement Mode P-Channel MOSFET, ON Semiconductor

Features and Benefits:

Applications:

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