STMicroelectronics STripFET II Type N-Channel MOSFET, 120 A, 100 V Enhancement, 3-Pin TO-263 STB120NF10T4
- RS Stock No.:
- 687-5065
- Mfr. Part No.:
- STB120NF10T4
- Manufacturer:
- STMicroelectronics
Bulk discount available
Subtotal (1 pack of 2 units)*
€8.47
(exc. VAT)
€10.418
(inc. VAT)
In Stock
- 1,234 unit(s) ready to ship from another location
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 2 - 8 | €4.235 | €8.47 |
| 10 - 24 | €3.83 | €7.66 |
| 26 - 98 | €3.63 | €7.26 |
| 100 - 498 | €2.91 | €5.82 |
| 500 + | €2.575 | €5.15 |
*price indicative
- RS Stock No.:
- 687-5065
- Mfr. Part No.:
- STB120NF10T4
- Manufacturer:
- STMicroelectronics
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | STMicroelectronics | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 120A | |
| Maximum Drain Source Voltage Vds | 100V | |
| Package Type | TO-263 | |
| Series | STripFET II | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 10.5mΩ | |
| Channel Mode | Enhancement | |
| Forward Voltage Vf | 1.3V | |
| Maximum Power Dissipation Pd | 312W | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 172nC | |
| Maximum Operating Temperature | 175°C | |
| Width | 9.35 mm | |
| Length | 10.4mm | |
| Standards/Approvals | No | |
| Height | 4.6mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand STMicroelectronics | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 120A | ||
Maximum Drain Source Voltage Vds 100V | ||
Package Type TO-263 | ||
Series STripFET II | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 10.5mΩ | ||
Channel Mode Enhancement | ||
Forward Voltage Vf 1.3V | ||
Maximum Power Dissipation Pd 312W | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 172nC | ||
Maximum Operating Temperature 175°C | ||
Width 9.35 mm | ||
Length 10.4mm | ||
Standards/Approvals No | ||
Height 4.6mm | ||
Automotive Standard No | ||
N-Channel STripFET™ II, STMicroelectronics
STripFET™ MOSFETs with a wide breakdown voltage range offer ultra-low gate charge and low on-resistance.
MOSFET Transistors, STMicroelectronics
Related links
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- STMicroelectronics STripFET II Type N-Channel MOSFET 100 V Enhancement, 3-Pin TO-263