Essential and Operational Technologies

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Select all	Attribute	Value
	Brand	Infineon
	Channel Type	N
	Maximum Continuous Drain Current	80 A
	Maximum Drain Source Voltage	75 V
	Package Type	IPAK (TO-251)
	Series	HEXFET
	Mounting Type	Through Hole
	Pin Count	3
	Maximum Drain Source Resistance	9 mΩ
	Channel Mode	Enhancement
	Maximum Gate Threshold Voltage	4V
	Minimum Gate Threshold Voltage	2V
	Maximum Power Dissipation	140 W
	Transistor Configuration	Single
	Maximum Gate Source Voltage	-20 V, +20 V
	Maximum Operating Temperature	+175 °C
	Typical Gate Charge @ Vgs	56 nC @ 10 V
	Length	6.73mm
	Number of Elements per Chip	1
	Transistor Material	Si
	Width	2.39mm
	Minimum Operating Temperature	-55 °C
	Height	6.22mm

	Select all
	Brand Infineon
	Channel Type N
	Maximum Continuous Drain Current 80 A
	Maximum Drain Source Voltage 75 V
	Package Type IPAK (TO-251)
	Series HEXFET
	Mounting Type Through Hole
	Pin Count 3
	Maximum Drain Source Resistance 9 mΩ
	Channel Mode Enhancement
	Maximum Gate Threshold Voltage 4V
	Minimum Gate Threshold Voltage 2V
	Maximum Power Dissipation 140 W
	Transistor Configuration Single
	Maximum Gate Source Voltage -20 V, +20 V
	Maximum Operating Temperature +175 °C
	Typical Gate Charge @ Vgs 56 nC @ 10 V
	Length 6.73mm
	Number of Elements per Chip 1
	Transistor Material Si
	Width 2.39mm
	Minimum Operating Temperature -55 °C
	Height 6.22mm

Infineon HEXFET N-Channel MOSFET, 80 A, 75 V, 3-Pin IPAK IRFU3607PBF

N-Channel Power MOSFET 60V to 80V, Infineon

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