Essential and Operational Technologies

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Units	Per unit	Per Tube**
50 - 50	€0.626	€31.30
100 - 200	€0.526	€26.30
250 - 450	€0.489	€24.45
500 - 1200	€0.457	€22.85
1250 +	€0.42	€21.00

Select all	Attribute	Value
	Brand	Infineon
	Channel Type	N
	Maximum Continuous Drain Current	80 A
	Maximum Drain Source Voltage	75 V
	Series	HEXFET
	Package Type	TO-220AB
	Mounting Type	Through Hole
	Pin Count	3
	Maximum Drain Source Resistance	9 mΩ
	Channel Mode	Enhancement
	Maximum Gate Threshold Voltage	4V
	Minimum Gate Threshold Voltage	2V
	Maximum Power Dissipation	140 W
	Transistor Configuration	Single
	Maximum Gate Source Voltage	-20 V, +20 V
	Transistor Material	Si
	Width	4.82mm
	Number of Elements per Chip	1
	Maximum Operating Temperature	+175 °C
	Length	10.66mm
	Typical Gate Charge @ Vgs	56 nC @ 10 V
	Height	9.02mm
	Minimum Operating Temperature	-55 °C

	Select all
	Brand Infineon
	Channel Type N
	Maximum Continuous Drain Current 80 A
	Maximum Drain Source Voltage 75 V
	Series HEXFET
	Package Type TO-220AB
	Mounting Type Through Hole
	Pin Count 3
	Maximum Drain Source Resistance 9 mΩ
	Channel Mode Enhancement
	Maximum Gate Threshold Voltage 4V
	Minimum Gate Threshold Voltage 2V
	Maximum Power Dissipation 140 W
	Transistor Configuration Single
	Maximum Gate Source Voltage -20 V, +20 V
	Transistor Material Si
	Width 4.82mm
	Number of Elements per Chip 1
	Maximum Operating Temperature +175 °C
	Length 10.66mm
	Typical Gate Charge @ Vgs 56 nC @ 10 V
	Height 9.02mm
	Minimum Operating Temperature -55 °C

Infineon HEXFET N-Channel MOSFET, 80 A, 75 V, 3-Pin TO-220AB IRFB3607PBF

Motor Control and AC-DC Synchronous Rectifier MOSFET, Infineon

Motor Control MOSFET

Synchronous Rectifier MOSFET

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