onsemi Isolated 2 Type N, Type P-Channel Power MOSFET, 3.9 A, 30 V Enhancement, 8-Pin SOIC SI4532DY

RS Stock No.:: 772-8938
Mfr. Part No.:: SI4532DY
Manufacturer:: onsemi

onsemi Isolated 2 Type N, Type P-Channel Power MOSFET, 3.9 A, 30 V Enhancement, 8-Pin SOIC SI4532DY

Bulk discount available

Subtotal (1 pack of 10 units)*

€6.58

(exc. VAT)

€8.09

(inc. VAT)

In Stock

2,490 unit(s) ready to ship from another location

Need more? Click ‘Check delivery dates’ to find extra stock and lead times.

Units	Per unit	Per Pack*
10 - 90	€0.658	€6.58
100 - 240	€0.496	€4.96
250 - 490	€0.49	€4.90
500 - 990	€0.419	€4.19
1000 +	€0.342	€3.42

*price indicative

RS Stock No.:: 772-8938
Mfr. Part No.:: SI4532DY
Manufacturer:: onsemi

Specifications

Technical data sheets

Legislation and Compliance

Product Details

Find similar products by selecting one or more attributes.

Select all	Attribute	Value
	Brand	onsemi
	Product Type	Power MOSFET
	Channel Type	Type N, Type P
	Maximum Continuous Drain Current Id	3.9A
	Maximum Drain Source Voltage Vds	30V
	Package Type	SOIC
	Mount Type	Surface
	Pin Count	8
	Maximum Drain Source Resistance Rds	190mΩ
	Channel Mode	Enhancement
	Maximum Gate Source Voltage Vgs	20 V
	Minimum Operating Temperature	150°C
	Maximum Power Dissipation Pd	2W
	Maximum Operating Temperature	-55°C
	Transistor Configuration	Isolated
	Length	5mm
	Standards/Approvals	No
	Width	4 mm
	Height	1.5mm
	Number of Elements per Chip	2
	Automotive Standard	No

	Select all
	Brand onsemi
	Product Type Power MOSFET
	Channel Type Type N, Type P
	Maximum Continuous Drain Current Id 3.9A
	Maximum Drain Source Voltage Vds 30V
	Package Type SOIC
	Mount Type Surface
	Pin Count 8
	Maximum Drain Source Resistance Rds 190mΩ
	Channel Mode Enhancement
	Maximum Gate Source Voltage Vgs 20 V
	Minimum Operating Temperature 150°C
	Maximum Power Dissipation Pd 2W
	Maximum Operating Temperature -55°C
	Transistor Configuration Isolated
	Length 5mm
	Standards/Approvals No
	Width 4 mm
	Height 1.5mm
	Number of Elements per Chip 2
	Automotive Standard No

Enhancement Mode Dual MOSFET, Fairchild Semiconductor

Enhancement Mode Field Effect Transistors are produced using Fairchild’s proprietary, high cell density, DMOS technology. This very high density process has been designed to minimise on-state resistance, provide rugged and reliable performance and fast switching.

MOSFET Transistors, ON Semi

ON Semi offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types. The Advanced silicon technology provides smaller die sizes, which it is incorporated into multiple industry-standard and thermally-enhanced packages.

ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.

onsemi Isolated 2 Type N, Type P-Channel Power MOSFET, 3.9 A, 30 V Enhancement, 8-Pin SOIC SI4532DY

Enhancement Mode Dual MOSFET, Fairchild Semiconductor

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